IRF640NPBF vs IRFB7437PBF Vergleich

Detaillierter Direktvergleich von IRF640NPBF von Infineon und IRFB7437PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF640NPBF IRFB7437PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,88 $0,92
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc 18 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 150 mOhm max at VGS = 10 V —
Power Dissipation (PD) at Tc=25C 150 W —
Total Gate Charge (Qg) 44.7 nC 150 nC
Betriebs-Sperrschichttemperatur -55C to +150C -55°C to +175°C
Technology HEXFET (5th Generation) StrongIRFET™, N-Channel Trench MOSFET
Transistortyp N-Channel Enhancement Mode —
Gehäuse TO-220AB (through-hole, 3-pin) TO-220AB (through-hole, 3 leads)
Montageart Through Hole Through Hole
Avalanche Energy Rated Yes —
dv/dt Rating Dynamic, rated —
RoHS-Status Compliant Compliant
Lead-Free Yes (PBF suffix) —
Manufacturer Infineon (formerly International Rectifier) Infineon (formerly International Rectifier)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C) — 195 A
Silicon-Limited Drain Current — 250 A
R_DS(on) typ @ VGS=10V — 1.5 mΩ
R_DS(on) max @ VGS=10V — 2.0 mΩ
Gate-Source Threshold Voltage (VGS(th) typ) — 3.0 V (1.7 V min, 3.9 V max per datasheet family)
Miller Plateau Charge (Qgd) — 49 nC
Power Dissipation (PD @ Tc=25°C) — 230 W
Thermal Resistance Junction-to-Case (RθJC) — 0.62 °C/W
Lead Finish — Lead-free (PBF - Pb-free plating)
MSL-Level — Not Applicable (through-hole package)
AEC-Q101 Automotive — Not qualified (industrial/consumer)

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