IRF7342TRPBF vs IRF7205TRPBF Comparison

Detailed side-by-side comparison of IRF7342TRPBF by Infineon and IRF7205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7342TRPBF IRF7205TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.18
Part Number IRF7342TRPBF β€”
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR HEXFET (4th generation)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) β€”
Drain-Source Voltage (Vds) -55 V β€”
Continuous Drain Current (Id) -3.4 A at 25 C β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) β€”
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V β€”
Maximum Power Dissumption (Pd) 2 W β€”
Operating Temperature Range -55 C to +150 C (Tj) β€”
Package 8-SOIC (SO-8), surface mount SO-8 (8-SO)
Mounting Type Surface Mount Surface Mount
Packaging Tape and Reel (TR) Tape & Reel (TR suffix)
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) β€”
Channel Type P-Channel (enhancement mode) β€”
Number of Channels 2 (dual array) β€”
FET Type β€” P-Channel MOSFET
Drain-to-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (ID) at TA=25Β°C β€” -4.6 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V β€” 70 mΞ©
On-Resistance RDS(on) max @ VGS=-4.5V β€” 130 mΞ©
Gate Threshold Voltage VGS(th) β€” -1.0 V to -3.0 V
Total Gate Charge Qg β€” 27 nC
Power Dissipation (TC=25Β°C) β€” 2.5 W
Operating Junction Temperature β€” -55 Β°C to +150 Β°C
RoHS / Lead-Free β€” Lead-Free (PBF suffix), RoHS compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote