IRF7342TRPBF vs IRF7205TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7342TRPBF disebabkan oleh Infineon dan IRF7205TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7342TRPBF IRF7205TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IRF7342TRPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR HEXFET (4th generation)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
Gambaran Suhu Operasi -55 C to +150 C (Tj) —
Kemasan 8-SOIC (SO-8), surface mount SO-8 (8-SO)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape and Reel (TR) Tape & Reel (TR suffix)
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
FET Type — P-Channel MOSFET
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) at TA=25°C — -4.6 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V — 70 mΩ
On-Resistance RDS(on) max @ VGS=-4.5V — 130 mΩ
Gate Threshold Voltage VGS(th) — -1.0 V to -3.0 V
Total Gate Charge Qg — 27 nC
Pembuangan Kuasa (TC=25°C) — 2.5 W
Suhu Hubungan Operasi — -55 °C to +150 °C
RoHS / Lead-Free — Lead-Free (PBF suffix), RoHS compliant

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