IRF7389TRPBF - 30V Dual N/P HEXFET MOSFET Array | Infineon
MPN: IRF7389TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.58 | $580.00 |
IRF7389TRPBF Overview
A dual MOSFET array (also called a complementary half-bridge MOSFET or co-pack) integrates one N-channel and one P-channel FET into a single package. This topology, in the broader taxonomy of power MOSFETs, falls under discrete semiconductors, specifically the MOSFETs category, and is commonly used to build synchronous-rectified or push-pull power stages where the N-channel handles the low-side switch and the P-channel handles the high-side switch without requiring a charge pump or bootstrap circuit. The result is a simpler gate-drive architecture and a smaller PCB footprint versus two discrete single-channel MOSFETs.
Key features of the IRF7389TRPBF include a 30V drain-to-source breakdown voltage (Vds) on both channels, 29 mOhm maximum on-resistance (RDS(on)) per the Infineon part page, and a thermally efficient SO-8 footprint with a power dissipation rating of 2.5W at TA = 25C. The N-channel and P-channel are matched for symmetrical switching performance, and the device is fully avalanche rated per JEDEC standards. The Generation V process provides a substantial reduction in gate charge and miller capacitance versus prior generations, enabling higher switching frequencies and reduced driver losses.
Typical applications for the IRF7389TRPBF include DC-DC converter high-side switches, motor-driver half-bridges, load switches in industrial 24V bus systems, battery protection circuits in portable equipment, and synchronous buck converters where the N+P architecture simplifies the gate-driver design. The complementary polarity makes it ideal for high-side P-channel switching without the complexity of a bootstrap circuit.
When designing with this part, ensure the SO-8 thermal pad (if present) is soldered to a sufficient copper pour to keep the junction temperature within the SOA. The 2.5W power dissipation limit is at TA = 25C and derates linearly to zero at 150C, so realistic board-level thermal design is essential.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design considerations not found in the bare datasheet.
Drop-in alternatives for IRF7389TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7389TRPBF (same form factor and footprint) β differing in Technology, Configuration, Manufacturer, Package, Avalanche Rated.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7389PBF
β Drop-Inβ In Stock
$0.61 / Unit
View Datasheet βIRF7319TRPBF
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βIRF7343TRPBF
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βIRF7389TRPBF-1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRF7319PBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRF7389TRPBF Maximum Ratings & Electrical Characteristics
| Transistor Polarity | N and P Channel |
| Drain-Source Voltage (Vds) | 30 V |
| Continuous Drain Current (N-Ch, Id) | 7.3 A |
| Continuous Drain Current (P-Ch, Id) | -5.3 A |
| On-Resistance RDS(on) Max | 29 mOhm |
| Power Dissipation (Pd) | 2.5 W |
| Configuration | Dual N+P Complementary Half-Bridge |
| Technology | HEXFET Generation V (IR MOSFET) |
| Package | 8-SO (SOIC-8) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C |
| Avalanche Rated | Yes |
| Lead Free / RoHS | Lead Free / RoHS Compliant |
| MSL Level | 1 |
| Manufacturer | Infineon (formerly International Rectifier) |
IRF7389TRPBF Pin Configuration
| Pin 1 | S1 β Source of P-channel MOSFET (M1) |
| Pin 2 | G1 β Gate of P-channel MOSFET (M1) |
| Pin 3 | D2 β Drain of N-channel MOSFET (M2) - typically tied to D1 |
| Pin 4 | S2 β Source of N-channel MOSFET (M2) |
| Pin 5 | G2 β Gate of N-channel MOSFET (M2) |
| Pin 6 | D2 β Drain of N-channel MOSFET (M2) - alternate / NC on some revisions |
| Pin 7 | D1 β Drain of P-channel MOSFET (M1) |
| Pin 8 | S1 β Source of P-channel MOSFET (M1) - alternate |
Safe Operating Area (SOA) - N-Channel and P-Channel
Typical Applications
IRF7389TRPBF is suitable for 6 applications: Synchronous Buck Converter High-Side Switch, DC Motor Half-Bridge Driver, 24V Industrial Bus Load Switch, Portable Battery Protection Circuit, USB-C VBUS Load Switch, Audio Amplifier Output Stage.
Synchronous Buck Converter High-Side Switch
The IRF7389TRPBF's complementary N+P-channel co-pack is well suited as the high-side and low-side switches in a 12V-input synchronous buck converter. The integrated P-channel high-side switch eliminates the need for a bootstrap capacitor or charge-pump circuit that would otherwise be required to drive a high-side N-channel MOSFET above the input rail, simplifying the gate-driver design and reducing BOM count. With 30V Vds headroom and 7.3A / -5.3A current capability, the part comfortably handles 12V bus rails with transient margin. The 29 mOhm on-resistance keeps conduction losses low at the moderate switching frequencies typical of point-of-load converters. Designers should still include a small RC snubber across the P-FET drain-source to limit ringing from the buck switch node.
Recommended
DC Motor Half-Bridge Driver
The IRF7389TRPBF is widely deployed in small brushed DC motor half-bridge drivers for industrial automation, robotics, and consumer appliances. The complementary N+P topology allows the motor terminal to be driven both high and low by a single low-side gate signal referenced to ground, without the level-shifting complexity of an all-N-channel H-bridge. The 7.3A peak current supports fractional-horsepower motors up to about 30W mechanical output, while the 30V Vds rating handles 12V and 24V bus rails. The SO-8 package is small enough to fit on a continuous-rotation robot drive PCB. Thermal design must keep the SO-8 junction below 150C during stalled-rotor (inrush) conditions, which can briefly exceed the 2.5W continuous dissipation rating.
Recommended
24V Industrial Bus Load Switch
In industrial 24V bus systems, the IRF7389TRPBF serves as a high-side P-channel load switch that disconnects downstream circuitry during fault conditions, brownouts, or maintenance cycles. The P-channel half of the co-pack is well suited because a simple ground-referenced logic signal can pull its gate low to turn the switch on, with no charge pump required. The 30V Vds rating provides only modest headroom over 24V nominal, so designers should add a TVS clamp such as a 33V SMA part to absorb load-dump transients common in industrial environments. The 2.5W power dissipation and SO-8 thermal performance are adequate for load currents up to about 1-2A continuous in a properly copper-poured PCB layout.
Recommended
Portable Battery Protection Circuit
The IRF7389TRPBF is well suited as a high-side battery disconnect switch in 2S to 4S Li-ion battery management systems, where the integrated P-channel switch simplifies the protection FET topology. The 30V Vds rating covers a fully charged 4S pack (16.8V), and the 5.3A continuous P-channel current supports discharge currents up to about 2-3A in compact portable equipment. The Generation V HEXFET process provides a low 29 mOhm on-resistance, minimizing voltage drop and conduction losses during high-current discharge. The SO-8 footprint is small enough for smartphone-form-factor battery packs and power-bank designs, and the part is fully avalanche rated to absorb inductive kickback from downstream DC-DC converters.
Recommended
USB-C VBUS Load Switch
The IRF7389TRPBF is commonly used as a 5V/12V VBUS load switch in USB-C power-sink applications, where the integrated P-channel MOSFET provides reverse-current blocking and soft-start capability. The 30V Vds rating easily handles USB-PD 20V negotiation, and the -5.3A P-channel current supports 60W (20V/3A) power profiles with margin. The N-channel half of the co-pack can be used to drive a low-side current-sense amplifier or to switch auxiliary loads. The SO-8 footprint is ideal for compact USB-PD dongle designs. Note that for higher-power 100W/240W EPR profiles, an external back-to-back N-FET arrangement with a dedicated gate driver such as the 2EDL8034G4CXTMA1 is recommended instead.
Recommended
Audio Amplifier Output Stage
The IRF7389TRPBF is occasionally used in class-D audio amplifier output stages where its complementary N+P topology can form a totem-pole output half-bridge. The 7.3A peak current supports amplifiers up to about 50W into 4-ohm loads, and the fast switching speed of the Generation V HEXFET process minimizes dead-time distortion in the audio band. The 30V Vds rating is sufficient for +/-15V audio rails. While dedicated class-D amplifier ICs typically deliver better THD and EMI performance, a discrete IRF7389TRPBF output stage is favored in audiophile and DIY tube-hybrid designs where sonic character is paramount. Designers must include gate-series resistors and a small RC snubber to control switching-edge EMI.
Recommended
Recommended Products Summary
Engineering reference data for IRF7389TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7389PBF | IRF7319TRPBF | IRF7343TRPBF | IRF7389TRPBF-1 |
|---|---|---|---|---|---|
| Package | 8-SO (SOIC-8) | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (Vds) | 30 V | 30 V | 30 V | 55 V | 30 V |
| Power Dissipation (Pd) | 2.5 W | 2.5 W | 2.5 W (SO-8) | 2.5 W (SO-8) | 2.5 W |
| Channel Configuration | N + P complementary | N + P complementary | N + P complementary | N + P complementary | N + P complementary |
| Technology | HEXFET Gen V | HEXFET Gen V | HEXFET Gen V | HEXFET Gen V | HEXFET Gen V |
| Avalanche Rated | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Complementary N+P co-pack eliminates bootstrap/charge-pump (vs Discrete dual-N MOSFET pair (e.g., 2x IRF7854TRPBF))
- Lowest RDS(on) in 30V SO-8 N+P family (vs IRF7319TRPBF)
- Fully avalanche rated for inductive loads (vs Non-avalanche-rated SO-8 MOSFETs)
Design Notes
Estimated: at 25C ambient with a minimal SO-8 footprint (no thermal pad and 1 oz copper, ~50 mm^2 of copper), the IRF7389TRPBF theta_JA is approximately 70-80 C/W. With 1W total dissipation, junction temperature rises 70-80C, so a 2.5W continuous rating is only achievable with substantial copper pour or forced airflow. For continuous loads above 1.5W, recommend at least 1 square inch of 2 oz copper on the drain pads, or add a small clip-on heatsink across the SO-8 body.
The IRF7389TRPBF SO-8 footprint has 8 standard SOIC-8 land pads plus the central thermal pad (drain 1/2 are internally common, drain 2 pads are internally common). Use a thermal pad layout that connects the N-FET drain pads together with a copper pour, and likewise the P-FET source pads. Add a 0.1uF ceramic bypass capacitor close to the gate-drive return path. Keep the high-current loop (input cap - half-bridge - output cap) as tight as possible to minimize parasitic inductance and switching-node ringing.
Do not exceed 30V Vds - the 30V rating has only modest headroom over a 24V industrial bus with inductive transients. Add a 33V TVS such as SMAJ33A across the bus. Also, the P-channel gate must be pulled fully to the source voltage (not just logic high) to fully turn off the device; a logic-level signal that does not reach Vbatt can leave the P-FET in linear operation, causing high dissipation and thermal runaway. The N-channel gate is standard 10V Vgs(max) rated - never exceed +/-20V on the gate.
Compliance Information
RoHS compliant and lead-free per the 'PBF' suffix in the MPN, as confirmed by the Infineon product page and DigiKey listing. The part is not AEC-Q100 qualified - it is intended for industrial and consumer applications, not automotive. Halogen-free per the standard Infineon HEXFET SO-8 product family.
