IRF7480MTRPBF vs IAUCN04S7N015GATMA1 Comparison
Detailed side-by-side comparison of IRF7480MTRPBF by Infineon and IAUCN04S7N015GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRF7480MTRPBF
IRF7480MTRPBF - 40V 217A N-Channel StrongIRFET MOSFET | Infineon
IRF7480MTRPBF β ActiveInfineon
IAUCN04S7N015GATMA1
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
IAUCN04S7N015GATMA1 β ActiveSpecification Comparison
| Parameter | IRF7480MTRPBF | IAUCN04S7N015GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $2.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRF7480MTRPBF | β |
| Technology | StrongIRFET (N-Channel MOSFET) | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tc=25C | 217 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Maximum On-Resistance RDS(on) max at VGS=10V | 1.2 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | 1.8 V to 2.5 V (typical range, datasheet) | β |
| Power Dissipation (PD) at Tc=25C | 96 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55C to +175C |
| Package Type | DirectFET Isometric ME (surface-mount LGA-style) | β |
| Mounting Type | Surface Mount | Surface Mount (IMS-compatible source-down) |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| REACH Status | [DATA_NEEDED: REACH compliance] | β |
| Standard Reel Quantity | 4800 pcs (ordered as IRF7480MTRPBF); 1000 pcs on 7-inch reel is IRF7480MTR1PBF | β |
| Series | StrongIRFET | β |
| Channel Type | N-Channel Enhancement Mode | N-Channel |
| Product Family | β | OptiMOS 7 |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 165 A (Tc) |
| Power Dissipation (P_D) | β | 96 W (Tc) |
| R_DS(on) max | β | 1.53 mΞ© at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Package | β | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Automotive Qualification | β | AEC-Q101 qualified |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |