IRF7480MTRPBF vs IAUCN04S7N015GATMA1 Comparaison
Comparaison détaillée côte à côte de IRF7480MTRPBF par Infineon et IAUCN04S7N015GATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF7480MTRPBF | IAUCN04S7N015GATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,55 | $2,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRF7480MTRPBF | — |
| Technology | StrongIRFET (N-Channel MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc=25C | 217 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Maximum On-Resistance RDS(on) max at VGS=10V | 1.2 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V to 2.5 V (typical range, datasheet) | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | -55C to +175C |
| Package Type | DirectFET Isometric ME (surface-mount LGA-style) | — |
| Type de montage | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Niveau MSL | 1 | 1 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant | Compliant |
| REACH Status | [DATA_NEEDED: REACH compliance] | — |
| Standard Reel Quantity | 4800 pcs (ordered as IRF7480MTRPBF); 1000 pcs on 7-inch reel is IRF7480MTR1PBF | — |
| Series | StrongIRFET | — |
| Channel Type | N-Channel Enhancement Mode | N-Channel |
| Product Family | — | OptiMOS 7 |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Boîtier | — | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Automotive Qualification | — | AEC-Q101 qualified |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |