IRF7480MTRPBF vs IAUCN04S7N015GATMA1 Comparación
Comparación detallada lado a lado de IRF7480MTRPBF por Infineon y IAUCN04S7N015GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7480MTRPBF | IAUCN04S7N015GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $2,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRF7480MTRPBF | — |
| Technology | StrongIRFET (N-Channel MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc=25C | 217 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Maximum On-Resistance RDS(on) max at VGS=10V | 1.2 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V to 2.5 V (typical range, datasheet) | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | -55C to +175C |
| Package Type | DirectFET Isometric ME (surface-mount LGA-style) | — |
| Tipo de montaje | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| REACH Status | [DATA_NEEDED: REACH compliance] | — |
| Standard Reel Quantity | 4800 pcs (ordered as IRF7480MTRPBF); 1000 pcs on 7-inch reel is IRF7480MTR1PBF | — |
| Series | StrongIRFET | — |
| Channel Type | N-Channel Enhancement Mode | N-Channel |
| Product Family | — | OptiMOS 7 |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Encapsulado | — | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Automotive Qualification | — | AEC-Q101 qualified |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |