IRF8736TRPBF vs IRFR2405TRPBF Comparison

Detailed side-by-side comparison of IRF8736TRPBF by Infineon and IRFR2405TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF8736TRPBF IRFR2405TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Technology StrongIRFET / HEXFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Package SO-8 (8-SO, MS-012AA) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) —
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL Level 1 (per JEDEC J-STD-020) 1
Avalanche Rated Yes (fully characterized avalanche voltage) Yes (100% avalanche tested)
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Manufacturer — Infineon Technologies
Part Status — Active
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Total Gate Charge (Qg) — 70 nC
Power Dissipation (PD) at Tc=25C — 110 W
Operating Junction Temperature — -55C to +175C
Pin Count — 3 (Gate, Drain, Source) + Tab
RoHS Status — Compliant (Lead-Free PBF suffix)
Halogen Free — [DATA_NEEDED: halogen-free status]

Datasheets & Resources

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