IRF8736TRPBF vs IRFR2405TRPBF Comparación
Comparación detallada lado a lado de IRF8736TRPBF por Infineon y IRFR2405TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF8736TRPBF | IRFR2405TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,27 | $0,61 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET / HEXFET | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 18 A | — |
| Power Dissipation (PD) Max at TA=25C | 2.5 W | — |
| Drain-Source On-Resistance (RDS(on)) Max | 4.8 mOhm at VGS = 10V | — |
| Gate Charge (Qg) Typical | 17 nC | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Encapsulado | SO-8 (8-SO, MS-012AA) | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | — |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Rated | Yes (fully characterized avalanche voltage) | Yes (100% avalanche tested) |
| Configuration | Single | — |
| Packaging | Tape & Reel (TRPBF suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Status | — | Active |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 56 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 16 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at 5V] |
| Total Gate Charge (Qg) | — | 70 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Recuento de pines | — | 3 (Gate, Drain, Source) + Tab |
| Estado RoHS | — | Compliant (Lead-Free PBF suffix) |
| Sin halógenos | — | [DATA_NEEDED: halogen-free status] |