IRF8736TRPBF vs IRFR2405TRPBF 비교

다음의 상세 나란히 비교: IRF8736TRPBF 제조: Infineon 및 IRFR2405TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF8736TRPBF IRFR2405TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.27 $0.61
FET Type N-Channel N-Channel
Technology StrongIRFET / HEXFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
패키지 SO-8 (8-SO, MS-012AA) TO-252AA (DPAK)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +150C (junction) —
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 레벨 1 (per JEDEC J-STD-020) 1
Avalanche Rated Yes (fully characterized avalanche voltage) Yes (100% avalanche tested)
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Manufacturer — Infineon Technologies
Part Status — Active
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Total Gate Charge (Qg) — 70 nC
Power Dissipation (PD) at Tc=25C — 110 W
동작 접합 온도 — -55C to +175C
핀 수 — 3 (Gate, Drain, Source) + Tab
RoHS 상태 — Compliant (Lead-Free PBF suffix)
할로겐 프리 — [DATA_NEEDED: halogen-free status]

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