IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon
MPN: IRF9540NSTRLPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.95 | $95.00 |
| 500 | $0.82 | $410.00 |
| 1,000 | $0.71 | $710.00 |
| 3,000 | $0.58 | $1,740.00 |
Drop-in alternatives for IRF9540NSTRLPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF9540NSPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF9540NPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF4905STRLPBF
β Drop-Inβ In Stock
$0.95 / Unit
View Datasheet βIRF5305PBF
β Drop-Inβ In Stock
$0.51 / Unit
View Datasheet βFQP27P06
β Drop-Inπ Reference alternative (not in catalog)
IRF9540NSTRLPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon (formerly International Rectifier) |
| Product Type | Single P-Channel Power MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | -100 V |
| Continuous Drain Current (Id) | -23 A (at Tc) |
| On-Resistance (Rds(on)) | 117 mOhm max |
| Total Gate Charge (Qg) | 64.7 nC |
| Power Dissipation (Ta) | 3.1 W |
| Power Dissipation (Tc) | 110 W |
| Package | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount |
| Technology | HEXFET, Advanced Process |
| Polarity | P-Channel |
| Operating Mode | Enhancement-mode |
| Avalanche Rated | Yes |
| Lead Finish | Pb-free, RoHS-compliant |
| Shipping Media | Tape and Reel (TR suffix) |
IRF9540NSTRLPBF Pin Configuration
| Pin 1 | Gate β Gate control input; pull below Source by Vgs(th)+ to turn on |
| Pin 2 | Drain β Drain connection (also bonded to the metal tab) |
| Pin 3 | Source β Source connection; reference for gate drive |
| Pin Tab | Drain β Metal mounting tab, electrically common with Drain (pin 2); provides thermal path to PCB |
Safe Operating Area (DC)
Typical Applications
IRF9540NSTRLPBF is suitable for 7 applications: High-Side Load Switch in 48V Industrial Systems, Reverse-Polarity Protection Circuit, DC Motor Drive H-Bridge High-Side Element, Battery Disconnect Switch in UPS Systems, Synchronous Rectifier Replacement, Power Supply Hot-Swap Controller, Audio Amplifier Output Stage Protection.
High-Side Load Switch in 48V Industrial Systems
The IRF9540NSTRLPBF is an excellent fit for high-side load switching in 48V industrial and telecom rails because its P-Channel construction allows ground-referenced gate drive without a charge pump or bootstrap circuit. With -100V Vdss rating it tolerates nominal 48V plus inductive transients, and the 117 mOhm Rds(on) keeps conduction loss manageable at typical 5-10A loads. Placed source-side to the load with gate driven by a small logic-level MOSFET or opto-isolated driver, the device provides clean, low-loss on/off control.
Recommended
Reverse-Polarity Protection Circuit
The IRF9540NSTRLPBF is widely used in reverse-polarity protection circuits for battery-powered equipment. With its source connected to the load and gate tied to ground through a pull-down resistor, the MOSFET turns on during normal operation and self-biases off when input polarity reverses. The -100V Vdss rating handles automotive load-dump transients up to 60V, while the 117 mOhm Rds(on) adds only modest voltage drop. The avalanche-rated body diode also absorbs reverse inductive kickback.
Recommended
DC Motor Drive H-Bridge High-Side Element
In H-bridge DC motor drive topologies, the IRF9540NSTRLPBF serves as the high-side switch on each leg, paired with an N-Channel MOSFET on the low side. Its P-Channel polarity simplifies high-side gate drive to a simple level-shifted logic signal, eliminating the need for bootstrap capacitors. The 23A continuous drain current comfortably handles fractional-horsepower motor loads, and the 110W Tc power dissipation rating allows sustained PWM operation with proper PCB thermal design.
Recommended
Battery Disconnect Switch in UPS Systems
The IRF9540NSTRLPBF functions as a solid-state battery disconnect switch in UPS, solar charge controller, and e-bike battery management systems. With -100V Vdss and 23A Id, it handles 12V, 24V, and 48V battery stacks with substantial headroom. The low Rds(on) of 117 mOhm minimizes quiescent power loss, while the P-Channel configuration enables simple on/off control via a single low-side gate driver. The avalanche rating protects against inductive kickback from battery wiring inductance.
Recommended
Synchronous Rectifier Replacement
In low-frequency synchronous rectifier or OR-ing diode applications, the IRF9540NSTRLPBF replaces a Schottky diode to dramatically reduce conduction loss. With 117 mOhm Rds(on), at 10A the part dissipates only 11.7W versus 60W for a typical 60V Schottky. The P-Channel polarity makes it natural for high-side OR-ing between redundant power supplies, with gate tied to the lower-voltage rail through a Zener-resistor network for self-driven operation.
Recommended
Power Supply Hot-Swap Controller
The IRF9540NSTRLPBF serves as the pass element in -48V telecom hot-swap controllers, where its -100V Vdss rating and 23A Id handle the full power envelope of a typical -48V distribution rail. The P-Channel gate is driven by a hot-swap controller IC that ramps Vgs slowly to limit inrush current, while the part's avalanche rating absorbs the energy stored in PCB and cable inductance during hot-plug events. The 117 mOhm Rds(on) provides controlled foldback during current-limit conditions.
Recommended
Audio Amplifier Output Stage Protection
In high-power audio amplifier designs, the IRF9540NSTRLPBF acts as a power supply rail switch that disconnects the load during fault conditions. The -100V rating suits amplifiers running on +/-50V rails, and the 23A continuous drain current handles peak musical transients. The avalanche-rated design absorbs back-EMF from speakers during DC-offset protection events, and the D2PAK package bolts to the amplifier chassis heatsink for shared thermal management.
Recommended
Recommended Products Summary
Engineering reference data for IRF9540NSTRLPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF9540NSPBF | IRF9540NPBF | IRF4905STRLPBF | IRF5305PBF | FQP27P06 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Vdss (V) | -100 V | -100 V | -100 V | -55 V | -55 V | -60 V |
| Continuous Drain Current (A) | -23 A (Tc) | -23 A | -23 A | -74 A | -31 A | -27 A |
| Rds(on) (mOhm) | 117 mOhm max | 117 mOhm | 117 mOhm | 20 mOhm (lower) | 60 mOhm | 70 mOhm |
| Total Gate Charge (nC) | 64.7 nC | 64.7 nC | 64.7 nC | 180 nC (higher) | 63 nC | 48 nC (lower) |
| Power Dissipation Tc (W) | 110 W | 110 W | 110 W | 200 W (higher) | 110 W | 120 W |
Key Differentiators
- P-Channel polarity simplifies high-side switching (vs IRF640NPBF (N-Channel equivalent))
- Higher Vdss rating for industrial rails (vs FQP27P06 (onsemi))
- Avalanche-rated for inductive switching (vs IRF5305PBF (lower-voltage variant))
- Mature, broad second-source availability (vs IRF9540STRLPBF (older generation))
Design Notes
Estimated: The D2PAK package has typical junction-to-case thermal resistance (RthJC) of about 1.0 C/W, meaning 50W dissipation produces a 50C junction rise above the case. In free air, the part is limited to 3.1W (Ta), so for any continuous load above ~5A the metal tab MUST be soldered to a minimum 1 square inch of 2oz copper pour, or bolted to an external heatsink. Without this thermal management, the internal thermal shutdown will trip at high currents or the device will fail prematurely.
Because the D2PAK tab is internally bonded to the Drain (pin 2), the PCB copper pour under the tab doubles as both thermal relief and the drain electrical connection. Use a star-pattern or thermal-via array under the tab to spread heat into inner copper layers. Keep source and gate traces short and direct to minimize parasitic inductance that causes gate ringing and unintended turn-on during high dv/dt transitions.
The IRF9540NSTRLPBF is a P-Channel enhancement-mode MOSFET, so the gate must be pulled at least Vgs(th)+Vgs(plating) BELOW the source to fully enhance. At Vgs = -10V the device is fully on with the specified 117 mOhm Rds(on). For logic-level control, drive the gate from a small N-Channel MOSFET or a dedicated gate-driver IC capable of swinging rail-to-rail; a weak open-collector pull-up will leave the part in the linear region and cause excessive dissipation.
Do not exceed Vds = -100V, including transient spikes from inductive loads. Add a TVS diode or snubber across the drain-source if switching off inductive loads. Also, the body diode has a slow reverse recovery for a MOSFET and may need a parallel Schottky in high-frequency switching applications above 100 kHz. Always include a gate-source resistor (typically 10k-100k) to ensure the device defaults to off if the gate driver is disconnected.
Compliance Information
Pb-free (PBF suffix) per Infineon product page; RoHS compliant; REACH compliant as of 2026-09-13; not AEC-Q100 qualified - automotive applications should use AEC-Q100 qualified parts
