IRF9530NSTRLPBF -100V P-Ch HEXFET MOSFET, 14A, D2PAK | Infineon
MPN: IRF9530NSTRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.95 | $95.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
IRF9530NSTRLPBF Overview
A P-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device in which the majority carriers are holes. P-channel devices simplify high-side switching because the load is tied to ground and the MOSFET source sits at the supply rail, eliminating the bootstrap or charge-pump circuitry required by N-channel high-side switches. Within the broader taxonomy, a P-channel MOSFET belongs to power MOSFETs -> MOSFETs -> discrete semiconductors -> power management semiconductors. HEXFET is Infineon's planar-cell process trademark that optimizes the trade-off between RDS(on), gate charge, and avalanche ruggedness for industrial-grade switching.
Key differentiating features include a low 200 mOhm maximum on-resistance, 38.7 nC total gate charge, and -20V maximum gate-source rating. The D2PAK package has a thermal resistance of 1.5 C/W junction-to-case, allowing up to 79W of dissipation when properly mounted on a copper-spreader PCB. The -PbF suffix confirms lead-free, RoHS-compliant terminations.
Technically, the IRF9530NSTRLPBF is built on Infineon's HEXFET generation process, which uses a vertical DMOS structure with a planar gate. The P-channel polarity is achieved by an n-well body with p+ source/drain diffusions. This gives a positive threshold voltage (VGS(th) typically -2V to -4V) and predictable body-diode behavior for synchronous-rectifier and ORing applications. The device is avalanche-rated and qualified to industrial standards.
Typical applications include high-side load switches in industrial 48V systems, P-channel synchronous rectifiers in buck converters, motor-driver H-bridges, polarity-protection circuits, and battery-disconnect switches in -48V telecom and -60V solar systems.
When designing with this device, always confirm that the PCB copper area is sufficient to keep the junction temperature below 150C at worst-case load. Use a gate-drive resistor of 10-100 ohm to limit ringing, and ensure VGS never exceeds +/-20V including transients.
This page synthesizes Infineon datasheet parameters, current distributor pricing, drop-in equivalents in the same D2PAK footprint, and practical design guidance not found in the basic datasheet.
Drop-in alternatives for IRF9530NSTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF9530NSTRLPBF (same form factor and footprint) — differing in Package, Mounting Type, On-Resistance RDS(on) max @ VGS=-10V, Technology, Total Gate Charge (Qg).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF9530NPBF
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
$0.65 / Unit
View Datasheet →IRF9540NSTRLPBF
✅ Drop-In✓ In Stock
$0.58 / Unit
View Datasheet →IRF9530STRLPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF9530NSPBF
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
VBL2102M
✅ Drop-In📋 Reference alternative (not in catalog)
IRF9530NSTRLPBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TC=25C | -14 A |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mOhm |
| Total Gate Charge (Qg) | 38.7 nC (typ) |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Power Dissition (PD) at TC=25C | 79 W |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| Thermal Resistance Theta_JC | 1.5 C/W (typ) |
| Operating Temperature Range | -55C to +150C (TJ) |
| Package | D2PAK (TO-263-3) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) |
| Technology | HEXFET (Planar DMOS) |
IRF9530NSTRLPBF Pin Configuration
| Pin 1 | Gate — Gate control input (drive between 0V and -10V relative to Source) |
| Pin 2 | Drain — Drain terminal; internally connected to the metal tab/thermal pad |
| Pin 3 | Source — Source terminal (reference for gate drive; tied to the -V rail in high-side switch topology) |
| Pin Tab | Drain — Metal mounting tab; electrically tied to Drain (Pin 2) and serves as the thermal pad to the PCB |
Safe Operating Area (DC, TJ=25C, VGS=-10V unless noted)
Typical Applications
IRF9530NSTRLPBF is suitable for 6 applications: -48V Telecom High-Side Load Switch, P-Channel Synchronous Rectifier in Buck Converter, H-Bridge Motor Driver (P-Channel High Side), Battery Polarity / Reverse-Protection Switch, Solar PV Bypass / Blocking Diode Replacement, Industrial Solenoid / Relay Driver.
-48V Telecom High-Side Load Switch
The IRF9530NSTRLPBF is a strong fit for -48V telecom high-side load switching because its -100V VDS rating provides 100% headroom over the -48V rail, eliminating avalanche risk during transient spikes on the bus. Its P-channel polarity lets the load sit at ground while the MOSFET source rides at -48V, removing the bootstrap or charge-pump circuit required by an N-channel high-side switch. Placed between the -48V bus and the downstream DC-DC converter with a gate resistor of 10-100 ohm, the part adds <1 mOhm of body-diode drop at full load. Trade-off: conduction loss is 39W at -14A and 200 mOhm, so for higher current rails consider the IRF9540NSTRLPBF (117 mOhm, -23A) instead.
Recommended
P-Channel Synchronous Rectifier in Buck Converter
In a buck converter the IRF9530NSTRLPBF can serve as the P-channel synchronous rectifier (low-side switch driven from a level-shifted gate), where its 38.7 nC Qg keeps gate-drive loss under 40 mW even at 100 kHz. The 200 mOhm RDS(on) is acceptable for sub-5A output rails such as auxiliary 5V/12V converters. Compared to using the N-channel IRF540N as the low-side switch, the P-channel topology halves the driver complexity because the source is referenced to ground. Caveat: at heavy load (>10A) conduction loss becomes significant; for those rails the IRF9540NSTRLPBF at 117 mOhm is the same-footprint upgrade.
Recommended
H-Bridge Motor Driver (P-Channel High Side)
The IRF9530NSTRLPBF is widely used as the high-side switch in brushed-DC H-bridge motor drives up to 14A continuous, where its P-channel polarity simplifies the gate-drive path and eliminates the bootstrap diode. With both high-side and low-side FETs driven from a single supply, the H-bridge can be controlled by a low-cost half-bridge driver or a micro-stepping pre-driver. The HEXFET process gives robust body-diode recovery for inductive kick handling, which is critical when switching motor windings. Pair with N-channel IRF540N (TO-220) or IRF3205 (TO-220) for the low-side; both share the same VDS/ID class and trade at comparable pricing.
Recommended
Battery Polarity / Reverse-Protection Switch
A single IRF9530NSTRLPBF placed in series with a -24V to -48V battery stack provides solid-state reverse-polarity protection with only 200 mOhm of forward drop, replacing a Schottky diode and saving up to 7W of dissipation at -14A. The MOSFET body diode conducts momentarily during plug-in, but the gate is then pulled high (or low, depending on topology) to block reverse current. The -100V VDS rating ensures the part survives load-dump transients common on automotive and industrial battery rails. This topology is widely used in -48V distributed-power systems, forklift batteries, and solar PV disconnect boxes.
Recommended
Solar PV Bypass / Blocking Diode Replacement
In a photovoltaic string the IRF9530NSTRLPBF can replace the conventional Schottky bypass diode on each panel, reducing forward voltage drop from 0.5V to under 0.1V and recovering up to 1% of array yield per panel. Its -100V rating comfortably covers open-circuit voltages of 60V/72-cell modules, and the HEXFET process tolerates the sustained DC stress of bypass operation. For module-level power electronics (MLPE) such as optimizers, the part's small D2PAK footprint enables dense layouts. Ensure the gate is driven low (VGS=0) to keep the FET off during normal operation, and high (-10V) to bypass a faulted panel.
Recommended
Industrial Solenoid / Relay Driver
The IRF9530NSTRLPBF is well-suited to driving 24V/48V industrial solenoids, valves, and relays where the inductive load demands a TVS clamp or flyback path. With 14A continuous and 79W power dissipation, the D2PAK package can switch most hydraulic and pneumatic solenoids on 24V industrial control systems. The P-channel topology lets the solenoid return directly to the +24V rail while the FET pulls the high side to ground. Add a 1N4007 free-wheeling diode across the coil and a gate resistor of 47 ohm to limit dV/dt; the part's +/-20V VGS rating allows wide transient margin.
Recommended
Recommended Products Summary
Engineering reference data for IRF9530NSTRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF9530NPBF | IRF9540NSTRLPBF | IRF9530STRLPBF | IRF9530NSPBF | VBL2102M |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Vishay Siliconix | Infineon | VBsemi |
| Package | D2PAK (TO-263-3) | TO-220 (through-hole, not D2PAK) | D2PAK (TO-263-3) - same | TO-263 (D2PAK) - same | D2PAK (TO-263-3) - same | TO-263 (D2PAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS (V) | -100 | -100 | -100 | -100 | -100 | -100 |
| Lead-Free / RoHS | Yes (PbF suffix) | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (USD at qty=1000) | 0.65 | 0.55 (TO-220, tube) | 0.95 | 0.85 | 0.68 | 0.45 (distributor-dependent) |
Key Differentiators
- Industry-standard -100V / -14A P-channel HEXFET with broad second-source support (vs IRF9530STRLPBF (Vishay))
- Lower on-resistance than the original IR generation while keeping the same footprint (vs IRF9530 (original, no -N suffix))
- Lower price point at qty>=1000 compared to the higher-current IRF9540NSTRLPBF sibling (vs IRF9540NSTRLPBF)
Design Notes
At -14A continuous load with a typical -48V to -5V switching topology, the IRF9530NSTRLPBF dissipates roughly I^2*R = 14*14*0.2 = 39W. The D2PAK package has theta_JC of 1.5 C/W, so junction rise above case is 39*1.5 = 58.5C. With case held at 100C, the junction reaches 158.5C - above the 150C rating. Estimated using VDS=14A, RDS(on)=0.2 ohm, no heatsink. Mount the tab on a minimum 1 square inch of 2 oz copper pour to keep theta_JA near 40 C/W and TJ below 125C in 70C ambient.
The D2PAK drain tab is electrically hot; isolate the PCB copper pad with a solder mask-defined window or thermal vias under a star-ground configuration. Use a 47-100 ohm gate resistor to damp VGS ringing; add a 10 kohm pull-down on the gate to guarantee the FET stays off if the gate driver is tri-stated during power-up. Keep the gate trace short (<10mm) and route it away from the drain switching node to minimize Cgd-induced Miller turn-on. Use at least 2 oz copper on the drain pad for sustained current >10A.
P-channel MOSFETs in high-side switch topologies require the gate voltage to be referenced to the source, which swings with the supply rail. A -48V source means the gate must be driven to -58V to achieve VGS=-10V - most logic-level drivers cannot reach this. Use a gate driver with high-voltage level shift such as the FAN7392, or a bootstrap-style isolated driver. Also beware that VGS must never exceed +/-20V including ringing; a 20V Zener from gate to source is a standard protection method. Do not use the part as a low-side switch without verifying that the source can swing close to ground during saturation.
Compliance Information
PbF suffix confirms lead-free RoHS compliance. REACH-compliant per Infineon declaration. Not AEC-Q100 qualified - this is an industrial-grade part, not automotive. Halogen-free status not stated in the provided data.
