IRF9Z34NPBF vs IRF7205PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9Z34NPBF disebabkan oleh Infineon dan IRF7205PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9Z34NPBF IRF7205PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Polarity / Channel Type P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) at Tc=25C -19 A —
Pulsed Drain Current (Idm) -72 A —
Power Dissipation (Pd) at Tc=25C 68 W —
On-Resistance Rds(on) at Vgs=-10V 100 milliohm (typical) —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/min/max] —
Gate Charge (Qg) 23.3 nC (per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Gambaran Suhu Operasi -55C to +175C (junction) -55 C to +150 C (junction)
Kemasan TO-220AB (through-hole, 3-pin) SO-8
Jenis Pemasangan Through Hole Surface Mount
Pinout (G-D-S) Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source —
Technology HEXFET (5th generation) IR MOSFET (HEXFET, planar cell)
Lead-Free / Halogen-Free Yes (PBF suffix) —
Status RoHS Compliant Compliant (Pb-free per PBF suffix)
Polarity — P-Channel
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -4.6 A
On-Resistance RDS(on) max at VGS=-10V — 70 mOhm
On-Resistance RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) — -1 V to -3 V (typical)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation (TA=25C) — [DATA_NEEDED: Pd at TA=25C]
Switching Frequency Optimization — Below 100 kHz
Qualification — JEDEC standard
Generation — Fourth Generation HEXFET

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