IRF9Z34NPBF vs IRF7205PBF Perbandingan
Perbandingan bersamaan detil IRF9Z34NPBF dari Infineon dan IRF7205PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF9Z34NPBF | IRF7205PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | — |
| Pulsed Drain Current (Idm) | -72 A | — |
| Power Dissipation (Pd) at Tc=25C | 68 W | — |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55 C to +150 C (junction) |
| Paket | TO-220AB (through-hole, 3-pin) | SO-8 |
| Tipe Mounting | Through Hole | Surface Mount |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | — |
| Technology | HEXFET (5th generation) | IR MOSFET (HEXFET, planar cell) |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | — |
| Status RoHS | Compliant | Compliant (Pb-free per PBF suffix) |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -4.6 A |
| On-Resistance RDS(on) max at VGS=-10V | — | 70 mOhm |
| On-Resistance RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) | — | -1 V to -3 V (typical) |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (TA=25C) | — | [DATA_NEEDED: Pd at TA=25C] |
| Switching Frequency Optimization | — | Below 100 kHz |
| Qualification | — | JEDEC standard |
| Generation | — | Fourth Generation HEXFET |