IRFB3207ZPBF vs IRFB3306PBF Perbandingan

Perbandingan bersamaan detil IRFB3207ZPBF dari Infineon dan IRFB3306PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB3207ZPBF IRFB3306PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) IR HEXFET (MOSFET)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Suhu Hubung Kerja -55 C to +175 C -55°C to +175°C
Paket TO-220AB (3-lead through-hole) TO-220AB (through-hole)
Tipe Mounting Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Level MSL N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) Yes
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25°C — 120 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max — ±20 V
Rds(on) max @ Vgs=10V — 4.2 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge Qg]
Gate-Drain Charge (Qgd) typ — 26 nC (nominal)
Power Dissipation (Pd) at Tc=25°C — 230 W
RoHS / Lead-Free (PbF) — Yes (PbF suffix indicates lead-free, RoHS compliant)
Body Diode — Intrinsic (avalanche-rated)

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