IRFH5015TRPBF vs IRFR7540TRPBF Comparison
Detailed side-by-side comparison of IRFH5015TRPBF by Infineon and IRFR7540TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFH5015TRPBF | IRFR7540TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | StrongIRFET™ (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | — |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Package | 8-PQFN (5x6) SuperSO8 | TO-252AA (DPAK) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| Operating Temperature | -55C to +150C (TJ max) | — |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25°C | — | 90 A |
| Pulsed Drain Current (IDM) | — | 110 A (limited by TJmax) |
| Power Dissipation (PD) at TC=25°C | — | 140 W |
| RDS(on) max at VGS=10V | — | 4.8 mΩ |
| RDS(on) typical at 100µA VGS | — | 3.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.7 V typical |
| Operating Temperature Range | — | -55°C to +175°C (TJ max) |
| MSL Level | — | 1 |
| Lead-Free | — | Yes |