IRFH7084TRPBF vs IRFH5020TRPBF Comparison

Detailed side-by-side comparison of IRFH7084TRPBF by Infineon and IRFH5020TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFH7084TRPBF IRFH5020TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel MOSFET N-Channel, Metal Oxide
Technology StrongIRFET™ (trench MOSFET) —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C, package-limited) 100 A —
Silicon-Limited Drain Current 265 A —
Power Dissipation (PD, Tc=25°C) 156 W —
On-Resistance RDS(on) max @ VGS=10V 1.25 mΩ —
On-Resistance RDS(on) typ @ VGS=10V 0.95 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) typ 1.7 V to 2.7 V —
Input Capacitance (Ciss) max @ 25V 6560 pF —
Operating Temperature Range -55°C to +175°C (TJ) -55 °C to +150 °C (TJ max)
Package 8-PQFN 5x6 mm (SuperSO8) —
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (per industry standard for PQFN-8)
RoHS Status Compliant —
Halogen Free Compliant —
RthJC max 0.96 °C/W (per datasheet) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Family — HEXFET Power MOSFET
Configuration — Single with built-in diode
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TA=25°C — 5.1 A
Pulsed Drain Current (IDM) — 63 A
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=10V — 55 mΩ
Gate Charge (Qg) typ — 11 nC
Power Dissipation (TA=25°C) — 3.6 W
Power Dissipation (TC=25°C) — 8.3 W
Thermal Resistance, Junction-to-PCB (RthJB) — 0.8 °C/W
Package Type — 8-PQFN (5x6 mm) SuperSO8
Profile Height — ≤ 0.9 mm
Qualification Standard — JEDEC (Normal level)
Gate Drive Optimization — 10 V VGS
RoHS Compliance — Compliant (Pb-free suffix PBF)

Datasheets & Resources

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