IRFR220NTRPBF vs IRFR220NTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR220NTRPBF sa pamamagitan ng Infineon at IRFR220NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR220NTRPBF | IRFR220NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| On-Resistance Rds(on) max at VGS=10V | 600 milliohm | — |
| Total Gate Charge (Qg) | 15 nC (typical per Mouser listing) | [DATA_NEEDED: total gate charge Qg] |
| Maximum Power Dissition (PD) at TC=25°C | 43 W | — |
| Temperature ng Junction na Operasyon | -55°C to +150°C | — |
| Packhaging | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited floor life per JEDEC J-STD-020) | 1 |
| Tindminan RoHS | Compliant (PBF suffix) | Compliant (Pb-free PBF suffix) |
| Avalanche Energy Rated | Yes (fully characterized) | — |
| Lead-Free | Yes (PBF suffix indicates Pb-free plating) | — |
| Polarity | — | N-Channel |
| Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 5 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.800 ohm (max) |
| Gate-to-Drain Charge (Qgd) | — | Low (per datasheet - HEXFET design) |
| Power Dissipation (Pd) at Tc=25C | — | 43 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (junction) |
| Packaging | — | Tape & Reel (Left orientation - TRLPBF) |
| Avalanche Rated | — | Yes (HEXFET ruggedized design) |
| Technology Family | — | HEXFET, Planar, Generation 3 |