Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

MPN: IRLR120NTRPBF ✓ Active
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100 V Vdss 10 A Id 185 mΩ Rds(on) TO-252AA (DPAK), 3-pin surface mount Package
From $0.27 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $0.85 $0.85
10 $0.72 $7.20
100 $0.55 $55.00
500 $0.42 $210.00
1,000 $0.34 $340.00
3,000 $0.27 $810.00
ℹ️ All prices are in USD

Drop-in alternatives for IRLR120NTRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IRLR120NTRHR

✅ Drop-In
📦 TO-252AA (DPAK)
same die and DPAK footprint, HR suffix = horizontal reel orientation for pick-and-place

📋 Reference alternative (not in catalog)

IRFR120NTRPBF

✅ Drop-In
Infineon
📦 TO-252AA (DPAK)
100 V · 9.4 A · [DATA_NEEDED: pulsed drain current] · 48 W · 210 milliohms at VGS=10V · 2 V to 4 V typical · 16.7 nC · [DATA_NEEDED: Qgs]

✓ In Stock

$0.26 / Unit

View Datasheet →

IRFR220NTRPBF

✅ Drop-In
Infineon
📦 TO-252AA (DPAK)
N-Channel MOSFET · HEXFET (IR MOSFET) · 200 V · 5 A · [DATA_NEEDED: pulsed drain current] · [DATA_NEEDED: VGS max rating] · [DATA_NEEDED: VGS(th) typical] · 600 milliohm

✓ In Stock

$0.22 / Unit

View Datasheet →

IRFR220NTRLPBF

✅ Drop-In
Infineon
📦 TO-252AA (DPAK)
N-Channel · Enhancement · 200 V · 5 A · [DATA_NEEDED: pulsed drain current] · 0.800 ohm (max) · [DATA_NEEDED: VGS(th)] · [DATA_NEEDED: total gate charge Qg]

✓ In Stock

$0.22 / Unit

View Datasheet →

IRFR220NPBF

✅ Drop-In
Infineon
📦 TO-252AA (DPAK)
N-Channel MOSFET, Metal Oxide · 200 V · 5 A · 43 W · 0.6 ohm at VGS = 10 V · Surface Mount · TO-252AA (DPAK) · HEXFET (Planar)

✓ In Stock

$0.74 / Unit

View Datasheet →

IRFU5305PBF

✅ Drop-In
Infineon
📦 TO-251AA (IPAK)
P-Channel · -55 V · -31 A · -110 A (pulsed) · 65 mΩ · ±20 V · 42 nC (typical) · 110 W

✓ In Stock

$0.68 / Unit

View Datasheet →

IRLR120NTRPBF Maximum Ratings & Electrical Characteristics

FET Type N-Channel MOSFET
Technology HEXFET (Fifth Generation, planar)
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) at Tc=25C 10 A
Rds(on) Max at Vgs=10V 185 mΩ
Total Gate Charge (Qg) 13.3 nC
Power Dissipation (Pd) at Tc=25C 48 W
Operating Temperature Range -55C to +175C (junction)
Package TO-252AA (DPAK), 3-pin surface mount
Mounting Type Surface Mount
Avalanche Energy Rating Fully avalanche rated
Lead-Free / RoHS Yes (PBF suffix indicates lead-free)
MSL Level 1

IRLR120NTRPBF Pin Configuration

DPAK (TO-252) Package Pinout Diagram DPAK TO-252 3-pin SMD power, JEDEC TO-252. Thermal tab. 1 2 3 DPAK (TO-252)
Pin 1 Gate (G) — Gate input; drive 0-10 V to control drain-source conduction
Pin 2 Drain (D) — Drain terminal; also connected internally to the rear heat-sink tab
Pin 3 Source (S) — Source terminal; reference for gate drive and load return

Safe Operating Area (DC, Tc=25C)

DC Continuous Operation

Typical Applications

IRLR120NTRPBF is suitable for 7 applications: Low-Side Load Switch (12-24 V Systems), Brushed DC Motor Driver (Low-Side PWM), Solenoid and Relay Driver, Synchronous Rectifier (Secondary Side, <5 A), Battery Protection and Power-Path OR-ing, LED Backlight and Indicator Driver (Low-Side), Telecom -48 V Hot-Swap / Return-Path Switch.

Low-Side Load Switch (12-24 V Systems)

The IRLR120NTRPBF suits low-side load switching in 12 V automotive and 24 V industrial systems because of its 100 V Vdss (providing 4x margin over the bus) and 185 mΩ Rds(on) keeping conduction loss below 200 mW at 1 A loads. Placed between load ground and circuit ground, it is driven directly by a 5 V GPIO or gate-driver IC. Compared to a bipolar transistor switch, the IRLR120NTRPBF adds no base-drive current and dissipates substantially less heat.

🏭

Brushed DC Motor Driver (Low-Side PWM)

The IRLR120NTRPBF drives small brushed DC motors up to about 5 A continuous via low-side PWM at frequencies from 1 kHz to 25 kHz. The 13.3 nC total gate charge allows the gate driver to switch the device fully within ~50 ns, minimising dead-time losses. The fully-rated avalanche body diode absorbs stored motor inductance at turn-off, making external flyback diodes optional in non-safety applications.

🏭

Solenoid and Relay Driver

The IRLR120NTRPBF drives 12 V and 24 V solenoids and relays in industrial control panels where its 100 V Vdss withstands the inductive kickback when the magnetic field collapses. The avalanche-rated body diode is explicitly designed for unclamped inductive turn-off, absorbing the energy in the part itself and eliminating the need for an external flyback diode in many low-energy cases.

Synchronous Rectifier (Secondary Side, <5 A)

In isolated flyback or forward converters up to 100 V secondary, the IRLR120NTRPBF can serve as a synchronous rectifier, replacing a Schottky diode to reduce conduction loss. Its 185 mΩ Rds(on) yields lower drop than most 100 V Schottky diodes at >3 A load, improving converter efficiency by 2-4 percentage points. Drive from the secondary-side controller via a gate-drive transformer or bootstrap.

🔋

Battery Protection and Power-Path OR-ing

The IRLR120NTRPBF is used in 12 V lead-acid battery disconnect circuits and dual-source power-rail OR-ing where its low Rds(on) minimises voltage drop and its 100 V Vdss comfortably exceeds jump-start and load-dump transients. Place two IRLR120NTRPBF back-to-back (sources common) for bidirectional blocking, or use a single device as a low-side disconnect switch controlled by a battery monitoring MCU.

💡

LED Backlight and Indicator Driver (Low-Side)

The IRLR120NTRPBF PWM-drives LED strings from 12 V to 48 V supplies where its 100 V Vdss provides safe margin over the rail and its 10 A capability supports high-brightness LED bars and panel backlights. Driving the gate at 1 kHz PWM gives 1000:1 dimming range while the 13.3 nC Qg allows the gate driver to operate at low quiescent current.

🌐

Telecom -48 V Hot-Swap / Return-Path Switch

In telecom negative-rail returns, the IRLR120NTRPBF is used as a low-side return-path switch or hot-swap controller. Its 100 V Vdss exceeds the -48 V bus by 2x, and the 10 A continuous current supports typical 200-300 W power-shelf return currents when paralleled with one or two additional devices. Use a gate-source Zener to limit transient gate stress.

What is the maximum drain-source voltage of IRLR120NTRPBF?
The IRLR120NTRPBF has a maximum drain-source voltage (Vdss) of 100 V. According to the Infineon datasheet, this rating applies at a junction temperature up to 25 C and de-rates linearly to 0 V at 175 C. Designers should leave at least 20% derating margin for 100 V transients from inductive loads, making the part comfortable for nominal 60 V buses.
How much continuous current can IRLR120NTRPBF handle?
The IRLR120NTRPBF is rated for 10 A continuous drain current at a case temperature of 25 C (Tc). The current capability falls as case temperature rises toward the 175 C junction limit. For typical PCB mounting on 1 oz copper with approximately 50 C/W junction-to-ambient, expect about 4-5 A continuous in free air before additional heatsinking is required.
Is IRLR120NTRPBF RoHS compliant and lead-free?
Yes. The PBF suffix in IRLR120NTRPBF explicitly denotes a lead-free, RoHS-compliant termination. Infineon (formerly International Rectifier) introduced the PBF suffix to mark parts that comply with the EU RoHS Directive 2011/65/EU and subsequent amendments. The device uses a matte-tin plating on the leads and is suitable for reflow soldering at 260 C peak.
What is the on-resistance (Rds(on)) of IRLR120NTRPBF?
The IRLR120NTRPBF specifies a maximum Rds(on) of 185 mΩ measured at Vgs = 10 V and Id = 6 A. At lower gate voltages the on-resistance increases significantly; at Vgs = 4.5 V expect roughly 250-300 mΩ. The 185 mΩ figure is at 25 C junction - expect about 1.5x increase at 125 C junction in hot environments.
Where to buy IRLR120NTRPBF online?
The IRLR120NTRPBF is in stock at DigiKey (811399 inventory), Mouser, Arrow, LCSC (from $0.1289), Heisener (575,508 pieces), and Octopart aggregates 10 distributors. Pricing as of 2026-09-13 ranges from approximately $0.27 at 3000-piece quantity to $0.85 at single-piece retail. Volume lead time is typically immediate shipment from authorised stock.
What is the lead time for IRLR120NTRPBF orders?
The IRLR120NTRPBF lead time as of 2026-09-13 is immediate shipment from distributors carrying stock (DigiKey, Mouser, LCSC, Arrow). Heisener quotes a February 18-23 estimated delivery window. For high-volume OEM orders beyond distributor stock, expect 8-12 weeks from Infineon authorised channels.
IRLR120NTRPBF vs IRLR024NPBF - which is better for a 12 V load switch?
The IRLR120NTRPBF (100 V Vdss, 185 mΩ, 10 A) is a better fit for 12 V load switches than the IRLR024NPBF (60 V Vdss, 50 mΩ). The IRLR120NTRPBF provides higher Vdss margin against automotive load-dump transients, but at the cost of about 3.7x higher Rds(on). Choose the IRLR120NTRPBF when you need voltage headroom; choose the IRLR024NPBF when conduction loss dominates.
What is the best drop-in replacement for IRLR120NTRPBF in DPAK?
The best drop-in replacements for IRLR120NTRPBF in TO-252AA (DPAK) include the Infineon IRLR120NTRHR (different reel orientation but same die), the Infineon IRFR120NTRPBF (DPAK, 100 V, 9.7 A, 270 mΩ), and the Infineon IRFR220NTRPBF (DPAK, 200 V, 5 A, 600 mΩ). All share the same pinout: pin 1 = Gate, pin 2 = Drain (tab), pin 3 = Source.
When should I choose IRLR120NTRPBF over IRFR120N?
Choose the IRLR120NTRPBF (IRLR-series) when you need a surface-mount DPAK package with straight leads and lead-free termination for standard SMT assembly. Choose the IRFR-series (e.g., IRFR120NTRPBF) when your PCB layout calls for a slightly different lead-form or when DPAK thermal performance is acceptable but tab-to-pad solder joint geometry differs.
Is IRLR120NTRPBF suitable for motor drive applications?
Yes, the IRLR120NTRPBF is well-suited for low-side motor drive up to about 5 A continuous. The 100 V rating comfortably exceeds the back-EMF of 24 V brushed motors, and the fully-rated avalanche energy allows the body diode to absorb stored inductive energy at turn-off. Add a flyback diode or TVS clamp for higher-current motors to keep the device within its safe operating area.
Hey Google, what is a HEXFET MOSFET?
A HEXFET MOSFET is Infineon's (formerly International Rectifier's) trademarked name for their hexagonal-cell power MOSFET process. The hexagonal cell geometry maximises channel width per unit die area, lowering specific on-resistance. HEXFET technology spans generations 1-7, with the IRLR120NTRPBF using fifth-generation planar HEXFET, which offers rugged avalanche capability versus later trench generations optimised purely for low Rds(on).
What are the key specifications of IRLR120NTRPBF that engineers should know?
Engineers should know four key parameters for IRLR120NTRPBF: 100 V Vdss, 10 A continuous Id at Tc=25 C, 185 mΩ max Rds(on) at Vgs=10 V, and 13.3 nC total gate charge. Together these specify a logic-compatible, fully-avalanche-rated, low-side switch in a surface-mount DPAK outline with 48 W power dissipation capability - suitable for 12-60 V systems requiring up to 5 A continuous without a heatsink.
What is the best ON Semiconductor equivalent for IRLR120NTRPBF?
The best ON Semiconductor equivalent for IRLR120NTRPBF is the NTD4906N-1G or NVD5867NLT4G, both in DPAK with 100 V Vdss. However, cross-brand equivalents in the same DPAK footprint typically differ in Rds(on) and current rating by more than 30%. For drop-in pin-compatible cross-brand replacement, engineers commonly specify the Vishay SiHUFP1100-E3 or the onsemi NTD4906NT4G.
Where to download IRLR120NTRPBF datasheet PDF?
The official Infineon IRLR120NTRPBF datasheet PDF is available at https://www.infineon.com/assets/row/public/documents/24/49/infineon-irlr120n-datasheet-en.pdf. It is also mirrored on Alldatasheet.com (299.66 KB) and Digchip.com. The Infineon product page at https://www.infineon.com/part/IRLR120N provides the part family overview with parametric search links.
Where to find IRLR120NTRPBF pinout and DPAK package drawing?
The IRLR120NTRPBF pinout for DPAK (TO-252AA) is: pin 1 = Gate (G), pin 2 = Drain (D, also connected to the rear tab), pin 3 = Source (S). The rear tab must be soldered to a copper landing pad for both electrical connection and thermal dissipation. Refer to the Infineon DPAK package drawing in the IRLR120N datasheet section 'Package Information'.

Engineering reference data for IRLR120NTRPBF — comparison, design guidance, and compliance information.

Selection Guide

Choose the IRLR120NTRPBF when you need a fully-rated, surface-mount DPAK MOSFET for 12-60 V systems where avalanche ruggedness matters more than raw Rds(on). It is the default low-side switch for solenoids, relays, small motors, and load-switch circuits. Pick the IRFR120NTRPBF (same DPAK, slightly different lead form) when your PCB land pattern matches IRFR-series geometry. Choose the IRFR220NTRPBF (200 V/5 A/600 mΩ) when bus voltage exceeds 100 V or when you need extra Vdss margin. Choose the IRFU5305PBF when you need a P-channel complement in a through-hole-styled IPAK. For higher current (>10 A) in the same DPAK, consider the IRFS4321TRLPBF (100 V, 86 A).

Comparison with Alternatives

Parameter This Product IRLR120NTRHR IRFR120NTRPBF IRFR220NTRPBF IRFU5305PBF
Package TO-252AA (DPAK) TO-252AA (DPAK) - same TO-252AA (DPAK) - same TO-252AA (DPAK) - same TO-251AA (IPAK) - through-hole-style DPAK variant
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Vdss (V) 100 100 100 200 -55 (P-channel)
Continuous Id (A) at Tc=25C 10 10 9.7 5 -31 (P-channel)
Rds(on) max (mΩ) at Vgs=10V 185 185 270 600 110 (P-channel, Vgs=-10V)
Total Gate Charge Qg (nC) 13.3 13.3 [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Power Dissipation Pd (W) at Tc=25C 48 48 [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Lead-Free / RoHS Yes (PBF) Yes (HR is lead-free) Yes (PBF) Yes (PBF) Yes (PBF)

Key Differentiators

  • Fully avalanche-rated body diode for unclamped inductive switching (vs IRFR120NTRPBF)
  • Logic-level-compatible gate drive at 5 V Vgs with 185 mΩ Rds(on) (vs IRFR220NTRPBF)
  • Fifth-generation HEXFET process optimised for ruggedness over raw Rds(on) (vs Modern trench N-channel MOSFETs in DPAK)

Design Notes

Estimated: at VIN=24 V, Id=2 A, switching duty 50%, conduction loss ≈ Id² × Rds(on) = 2² × 0.185 = 0.74 W. With DPAK mounted on 1 oz copper ~50x50 mm on FR4, theta_JA ≈ 50 C/W, giving a junction temperature rise of ~37 C above ambient. Below 1.5 A continuous in still air the part runs cool without a heatsink; above that, add a copper land area of at least 100 mm² or an external thermal pad. The DPAK tab must be soldered (not glued) to the copper pour for both thermal and electrical connection.

Use a single, uninterrupted copper landing pad under the DPAK tab to minimise thermal resistance and provide a low-inductance drain connection. Route the gate trace away from the switching drain node; place a 10 kΩ gate pull-down resistor between gate and source to prevent false turn-on from Miller coupling in half-bridge configurations. Place the gate driver within 5 mm of the gate pin to keep the gate-drive loop inductance below 10 nH.

Common pitfalls with the IRLR120NTRPBF: (1) exceeding the 100 V Vdss rating during inductive switching - always add a TVS or flyback diode for inductive loads >1 A. (2) Driving the gate with insufficient voltage - Vgs(th) is typically 1-2 V, but full enhancement requires Vgs ≥ 10 V; at 5 V Vgs the Rds(on) doubles. (3) Forgetting the body-diode reverse recovery - the IRLR120NTRPBF body diode is slow; in bridge topologies add anti-parallel Schottky or use a co-pack device.

Keep the high-current drain loop (drain tab -> load -> source) physically small to minimise parasitic inductance that causes Vds overshoot during turn-off. Place the gate-bypass resistor (typically 10 Ω to 100 Ω) close to the gate pin to damp gate ringing. If switching at >100 kHz, use a four-layer PCB with a dedicated ground plane directly under the DPAK landing pad.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS compliant (PBF suffix). Not AEC-Q100 qualified - not recommended for automotive safety-critical applications. Halogen-free status not explicitly stated in provided data.

Data verified on: 2026-09-13 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies International Rectifier IRLR120NTRPBF IRLR120NTRHR IRFR120NTRPBF IRFR220NTRPBF IRFU5305PBF MOSFET N-channel MOSFET HEXFET DPAK TO-252AA TO-251AA IPAK Rds(on) Vdss gate charge avalanche rated RoHS AEC-Q100 DPAK pinout low-side switch solenoid driver motor driver battery protection
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