IRFR2405TRPBF vs IRLB8748PBF Comparison
Detailed side-by-side comparison of IRFR2405TRPBF by Infineon and IRLB8748PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR2405TRPBF | IRLB8748PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.68 |
| Manufacturer | Infineon Technologies | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Technology | HEXFET (IR MOSFET) | β |
| Drain-Source Voltage (VDS) | 55 V | 30 V |
| Continuous Drain Current (ID) at Tc=25C | 56 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | 4.8 mOhm |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | β |
| Total Gate Charge (Qg) | 70 nC | 15 nC typical |
| Power Dissipation (PD) at Tc=25C | 110 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-252AA (DPAK) | β |
| Mounting Type | Surface Mount | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) + Tab | β |
| MSL Level | 1 | β |
| RoHS Status | Compliant (Lead-Free PBF suffix) | Compliant (Pb-free PBF suffix) |
| Halogen-Free | [DATA_NEEDED: halogen-free status] | β |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Continuous Drain Current (ID) at TC=25C | β | 92 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | β | 75 W |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Package Type | β | TO-220AB through-hole |
| Technology Family | β | StrongIRFET / HEXFET |
| Channel Type | β | N-Channel |
| Logic-Level Gate Drive | β | Yes (optimized for 5V VGS) |
| Qualification Standard | β | JEDEC (Industrial market per datasheet) |