IRFR2405TRPBF vs IRLB8748PBF 비교

다음의 상세 나란히 비교: IRFR2405TRPBF 제조: Infineon 및 IRLB8748PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR2405TRPBF IRLB8748PBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.61 $0.68
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel —
Technology HEXFET (IR MOSFET) —
Drain-Source Voltage (VDS) 55 V 30 V
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] +/- 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance RDS(on) max at VGS=10V 16 mOhm 4.8 mOhm
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC 15 nC typical
Power Dissipation (PD) at Tc=25C 110 W —
동작 접합 온도 -55C to +175C —
패키지 TO-252AA (DPAK) —
실장 유형 Surface Mount Through Hole
핀 수 3 (Gate, Drain, Source) + Tab —
MSL 레벨 1 —
RoHS 상태 Compliant (Lead-Free PBF suffix) Compliant (Pb-free PBF suffix)
할로겐 프리 [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) —
Continuous Drain Current (ID) at TC=25C — 92 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD) at TC=25C — 75 W
동작 온도 범위 — -55C to +175C (junction)
Package Type — TO-220AB through-hole
Technology Family — StrongIRFET / HEXFET
Channel Type — N-Channel
Logic-Level Gate Drive — Yes (optimized for 5V VGS)
Qualification Standard — JEDEC (Industrial market per datasheet)

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