IRFR2405TRPBF vs IRLB8748PBF Сравнение
Подробное сравнение бок о бок IRFR2405TRPBF от Infineon и IRLB8748PBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFR2405TRPBF | IRLB8748PBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,61 | $0,68 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET) | — |
| Drain-Source Voltage (VDS) | 55 V | 30 V |
| Continuous Drain Current (ID) at Tc=25C | 56 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | 4.8 mOhm |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | — |
| Total Gate Charge (Qg) | 70 nC | 15 nC typical |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Рабочая температура перехода | -55C to +175C | — |
| Корпус | TO-252AA (DPAK) | — |
| Тип монтажа | Surface Mount | Through Hole |
| Число выводов | 3 (Gate, Drain, Source) + Tab | — |
| Уровень MSL | 1 | — |
| Статус RoHS | Compliant (Lead-Free PBF suffix) | Compliant (Pb-free PBF suffix) |
| Без галогенов | [DATA_NEEDED: halogen-free status] | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Continuous Drain Current (ID) at TC=25C | — | 92 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| Диапазон рабочих температур | — | -55C to +175C (junction) |
| Package Type | — | TO-220AB through-hole |
| Technology Family | — | StrongIRFET / HEXFET |
| Channel Type | — | N-Channel |
| Logic-Level Gate Drive | — | Yes (optimized for 5V VGS) |
| Qualification Standard | — | JEDEC (Industrial market per datasheet) |