IRFR5505TRPBF vs IRF9Z34NPBF Comparison
Detailed side-by-side comparison of IRFR5505TRPBF by Infineon and IRF9Z34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5505TRPBF | IRF9Z34NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.65 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | β |
| Polarity | P-Channel | β |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET (5th generation) |
| Drain-Source Voltage (VDS) max | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -18 A | β |
| Pulsed Drain Current (IDM) | -72 A | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | β |
| Total Gate Charge (Qg) | 21.3 nC | β |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Rise Time (tr) | [DATA_NEEDED: tr] | β |
| Fall Time (tf) | [DATA_NEEDED: tf] | β |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | β |
| Package | TO-252AA (DPAK), surface mount | TO-220AB (through-hole, 3-pin) |
| Mounting Type | Surface Mount | Through Hole |
| RoHS Status | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | β |
| Polarity / Channel Type | β | P-Channel |
| Drain-Source Voltage (Vds) | β | -55 V |
| Continuous Drain Current (Id) at Tc=25C | β | -19 A |
| Pulsed Drain Current (Idm) | β | -72 A |
| Power Dissipation (Pd) at Tc=25C | β | 68 W |
| On-Resistance Rds(on) at Vgs=-10V | β | 100 milliohm (typical) |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical/min/max] |
| Gate Charge (Qg) | β | 23.3 nC (per Mouser listing) |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Pinout (G-D-S) | β | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source |
| Lead-Free / Halogen-Free | β | Yes (PBF suffix) |