IRFR5505TRPBF vs IRF9Z34NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5505TRPBF disebabkan oleh Infineon dan IRF9Z34NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR5505TRPBF | IRF9Z34NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| Polarity | P-Channel | — |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET (5th generation) |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | — |
| Pulsed Drain Current (IDM) | -72 A | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | — |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| Kemasan | TO-252AA (DPAK), surface mount | TO-220AB (through-hole, 3-pin) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Status RoHS | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) at Tc=25C | — | -19 A |
| Pulsed Drain Current (Idm) | — | -72 A |
| Power Dissipation (Pd) at Tc=25C | — | 68 W |
| On-Resistance Rds(on) at Vgs=-10V | — | 100 milliohm (typical) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical/min/max] |
| Gate Charge (Qg) | — | 23.3 nC (per Mouser listing) |
| Gambaran Suhu Operasi | — | -55C to +175C (junction) |
| Pinout (G-D-S) | — | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source |
| Lead-Free / Halogen-Free | — | Yes (PBF suffix) |