IRFR5505TRPBF vs IRF9Z34NPBF तुलना
विस्तृत दोनों ओर की तुलना IRFR5505TRPBF द्वारा Infineon और IRF9Z34NPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFR5505TRPBF | IRF9Z34NPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| Polarity | P-Channel | — |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET (5th generation) |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | — |
| Pulsed Drain Current (IDM) | -72 A | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | — |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| पैकेज | TO-252AA (DPAK), surface mount | TO-220AB (through-hole, 3-pin) |
| माउंटिंग प्रकार | Surface Mount | Through Hole |
| RoHS स्थिति | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) at Tc=25C | — | -19 A |
| Pulsed Drain Current (Idm) | — | -72 A |
| Power Dissipation (Pd) at Tc=25C | — | 68 W |
| On-Resistance Rds(on) at Vgs=-10V | — | 100 milliohm (typical) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical/min/max] |
| Gate Charge (Qg) | — | 23.3 nC (per Mouser listing) |
| ऑपरेटिंग तापमान रेंज | — | -55C to +175C (junction) |
| Pinout (G-D-S) | — | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source |
| Lead-Free / Halogen-Free | — | Yes (PBF suffix) |