IRFZ44NPBF vs IRF520NPBF Comparison

Detailed side-by-side comparison of IRFZ44NPBF by Infineon and IRF520NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ44NPBF IRF520NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.66
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 49 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-to-Source Voltage (VGS) max +/- 20 V β€”
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm β€”
Total Gate Charge (Qg) 42 nC β€”
Power Dissipation (PD) at Tc=25C 94 W β€”
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W β€”
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-220AB (3-pin + tab) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Technology HEXFET (Advanced Process) HEXFET (vertical DMOS)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] β€”
RoHS Status Compliant Compliant (Pb-free)
Manufacturer β€” Infineon Technologies
Series β€” HEXFET
Drain-to-Source Voltage (V_DSS) β€” 100 V
Continuous Drain Current (I_D) at Tc β€” 9.7 A
Pulsed Drain Current (I_DM) β€” [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (V_GS) max β€” Β±20 V
R_DS(on) max at V_GS=10V β€” 200 mOhm
Total Gate Charge (Q_g) β€” 16.7 nC
Power Dissipation (P_D) at Tc β€” 48 W
Operating Temperature Range β€” -55C to +175C
MSL Level β€” 1 (unlimited)
Lead-Free Finish β€” Yes (PBF suffix)

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