IRFZ44NPBF vs IRF520NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ44NPBF sa pamamagitan ng Infineon at IRF520NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFZ44NPBF IRF520NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm —
Total Gate Charge (Qg) 42 nC —
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-220AB (3-pin + tab) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Technology HEXFET (Advanced Process) HEXFET (vertical DMOS)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
Tindminan RoHS Compliant Compliant (Pb-free)
Manufacturer — Infineon Technologies
Series — HEXFET
Drain-to-Source Voltage (V_DSS) — 100 V
Continuous Drain Current (I_D) at Tc — 9.7 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (V_GS) max — ±20 V
R_DS(on) max at V_GS=10V — 200 mOhm
Total Gate Charge (Q_g) — 16.7 nC
Power Dissipation (P_D) at Tc — 48 W
Hanay ng Temperature na Operasyon — -55C to +175C
Level ng MSL — 1 (unlimited)
Lead-Free Finish — Yes (PBF suffix)

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