IRFZ44NPBF vs IRF520NPBF مقایسه
مقایسه دقیق کنار به کنار IRFZ44NPBF توسط Infineon و IRF520NPBF توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IRFZ44NPBF | IRF520NPBF |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | — |
| Total Gate Charge (Qg) | 42 nC | — |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| دمای اتصال کاری | -55C to +175C | — |
| بسته‌بندی | TO-220AB (3-pin + tab) | TO-220AB (through-hole) |
| نوع نصب | Through Hole | Through Hole |
| Technology | HEXFET (Advanced Process) | HEXFET (vertical DMOS) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| وضعیت RoHS | Compliant | Compliant (Pb-free) |
| Manufacturer | — | Infineon Technologies |
| Series | — | HEXFET |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| محدوده دمای کاری | — | -55C to +175C |
| سطح MSL | — | 1 (unlimited) |
| Lead-Free Finish | — | Yes (PBF suffix) |