IRLB8748PBF vs IRLB4030PBF Comparison

Detailed side-by-side comparison of IRLB8748PBF by Infineon and IRLB4030PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLB8748PBF IRLB4030PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $3.10
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at TC=25C 92 A β€”
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] β€”
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm 4.3 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] β€”
Gate-Source Voltage (VGS) max +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) 15 nC typical 87 nC
Power Dissipation (PD) at TC=25C 75 W β€”
Operating Temperature Range -55C to +175C (junction) -55C to +175C
Package Type TO-220AB through-hole β€”
Mounting Type Through Hole Through Hole
Technology Family StrongIRFET / HEXFET β€”
Channel Type N-Channel β€”
Logic-Level Gate Drive Yes (optimized for 5V VGS) β€”
RoHS Status Compliant (Pb-free PBF suffix) Compliant
Qualification Standard JEDEC (Industrial market per datasheet) β€”
Transistor Type β€” N-Channel MOSFET
Drain-to-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at Tc β€” 180 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current value]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Gate-to-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc β€” 370 W
Package β€” TO-220AB
Technology β€” HEXFET (StrongIRFET family)
Logic Level Drive β€” Yes (optimized for 4.5 V to 10 V VGS)
Qualification β€” JEDEC

Datasheets & Resources

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