IRLB8748PBF vs IRLB4030PBF Perbandingan

Perbandingan bersamaan detil IRLB8748PBF dari Infineon dan IRLB4030PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLB8748PBF IRLB4030PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TC=25C 92 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm 4.3 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical 87 nC
Power Dissipation (PD) at TC=25C 75 W —
Rentang Suhu Kerja -55C to +175C (junction) -55C to +175C
Package Type TO-220AB through-hole —
Tipe Mounting Through Hole Through Hole
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel —
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
Status RoHS Compliant (Pb-free PBF suffix) Compliant
Qualification Standard JEDEC (Industrial market per datasheet) —
Tipe Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 180 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc — 370 W
Paket — TO-220AB
Technology — HEXFET (StrongIRFET family)
Logic Level Drive — Yes (optimized for 4.5 V to 10 V VGS)
Qualification — JEDEC

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon