IRLB8748PBF vs IRLB4030PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLB8748PBF sa pamamagitan ng Infineon at IRLB4030PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLB8748PBF IRLB4030PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TC=25C 92 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm 4.3 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical 87 nC
Power Dissipation (PD) at TC=25C 75 W —
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55C to +175C
Package Type TO-220AB through-hole —
Uri ng Pagpapasok Through Hole Through Hole
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel —
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
Tindminan RoHS Compliant (Pb-free PBF suffix) Compliant
Qualification Standard JEDEC (Industrial market per datasheet) —
Uri ng Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 180 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc — 370 W
Packhaging — TO-220AB
Technology — HEXFET (StrongIRFET family)
Logic Level Drive — Yes (optimized for 4.5 V to 10 V VGS)
Qualification — JEDEC

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