IRLHS6242TRPBF vs IRLML6346TRPBF Comparison
Detailed side-by-side comparison of IRLHS6242TRPBF by Infineon and IRLML6346TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLHS6242TRPBF
IRLHS6242TRPBF - 20V N-CH HEXFET MOSFET, 11.7mΞ© | Infineon
IRLHS6242TRPBF β Active
Specification Comparison
| Parameter | IRLHS6242TRPBF | IRLML6346TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.12 | $0.18 |
| FET Type | N-Channel | β |
| Technology | HEXFET (trench MOSFET) | HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | 20 V | β |
| Gate-to-Source Voltage (VGS) | Β±12 V | β |
| Continuous Drain Current (TA) | 10 A | β |
| Continuous Drain Current (TC) | 12 A | β |
| On-Resistance RDS(on) max @ VGS=4.5V | 11.7 mΞ© | β |
| Total Gate Charge (Qg) | 14 nC | β |
| Power Dissipation (TA) | 1.98 W | β |
| Power Dissipation (TC) | 9.6 W | β |
| Package | 6-PQFN (2x2) / DFN2020 with exposed pad | Micro3 / SOT-23 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55Β°C to +150Β°C | β |
| Gate Drive Level | Logic-level (4.5V); 2.5V-capable | β |
| Qualification | JEDEC standard | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) | β | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | β | 63 mOhm |
| RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | β | 2.5V logic-level |
| Maximum Power Dissipation (PD) | β | 1.3 W (TA=25C, 1in2 FR4) |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 |
| Lead-Free Finish | β | Yes (PBF suffix) |
| RoHS Status | β | Compliant |