IRLHS6242TRPBF vs IRLML6346TRPBF Perbandingan
Perbandingan bersamaan detil IRLHS6242TRPBF dari Infineon dan IRLML6346TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLHS6242TRPBF | IRLML6346TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Gate-to-Source Voltage (VGS) | ±12 V | — |
| Continuous Drain Current (TA) | 10 A | — |
| Continuous Drain Current (TC) | 12 A | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 11.7 mΩ | — |
| Total Gate Charge (Qg) | 14 nC | — |
| Power Dissipation (TA) | 1.98 W | — |
| Power Dissipation (TC) | 9.6 W | — |
| Paket | 6-PQFN (2x2) / DFN2020 with exposed pad | Micro3 / SOT-23 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55°C to +150°C | — |
| Gate Drive Level | Logic-level (4.5V); 2.5V-capable | — |
| Qualification | JEDEC standard | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Suhu Hubung Kerja | — | -55C to +150C |
| Level MSL | — | 1 |
| Lead-Free Finish | — | Yes (PBF suffix) |
| Status RoHS | — | Compliant |