IRLR2905TRPBF vs IRFR5410TRPBF Comparison

Detailed side-by-side comparison of IRLR2905TRPBF by Infineon and IRFR5410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR2905TRPBF IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF βœ“ Active

Specification Comparison

Parameter IRLR2905TRPBF IRFR5410TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.71
FET Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET, fifth generation) HEXFET (advanced process, Gen 5)
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] β€”
On-Resistance RDS(on) max @ VGS=10V 27 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Gate Charge (Qg) 32 nC β€”
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Avalanche Rated Yes Yes (fully avalanche rated)
Lead-Free / RoHS Yes / Compliant β€”
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Gate Drive Logic-level compatible β€”
Polarity β€” P-Channel
Drain-Source Voltage (VDS) β€” -100 V
Continuous Drain Current (ID) at TC = 25 Β°C β€” -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V β€” 205 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Total Gate Charge (Qg) typ β€” 70 nC
Power Dissition (PD) at TC = 25 Β°C β€” 66 W
Operating Temperature Range β€” -55 Β°C to +150 Β°C (TJ)
Lead-Free / RoHS Status β€” Lead-free, RoHS compliant (PBF suffix)
RDS(on) Test Conditions β€” VGS = -10 V, ID = -7.0 A

Datasheets & Resources

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