IRFR5410TRPBF - -100V P-Channel HEXFET MOSFET, 13A, DPAK | Infineon
MPN: IRFR5410TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.21 | $121.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.78 | $780.00 |
| 2,000 | $0.71 | $1,420.00 |
Drop-in alternatives for IRFR5410TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IRFR5410TRRPBF
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →IRFR5410TRLPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR5410PBF
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IRFR5410
✅ Drop-In📋 Reference alternative (not in catalog)
IRFU5410PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR5410TRPBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Total Gate Charge (Qg) typ | 70 nC |
| Package | TO-252AA (DPAK), surface mount |
| Power Dissition (PD) at TC = 25 °C | 66 W |
| Operating Temperature Range | -55 °C to +150 °C (TJ) |
| Mounting Type | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) |
| Avalanche Rated | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A |
IRFR5410TRPBF Pin Configuration
| Pin 1 | Gate — Gate control input - drive between 0 V and -10 V to turn the MOSFET on/off |
| Pin 2 | Drain — Drain connection (load side for high-side P-channel switching) |
| Pin 3 | Source — Source connection (tied to system positive rail; also on metal tab for thermal dissipation) |
| Pin TAB | Source (Tab) — Metal tab on bottom of package - electrically tied to Source (pin 3) and serves as primary thermal dissipation path |
Safe Operating Area - DC (IRFR5410, TA = 25 °C)
Typical Applications
IRFR5410TRPBF is suitable for 6 applications: High-Side Load Switching, Reverse-Polarity Battery Protection, DC-DC Converter High-Side Switch, Solenoid and Relay Driver, Power OR-ing for Redundant Supplies, Hot-Swap and Inrush Limiting.
High-Side Load Switching
The IRFR5410TRPBF is ideal for high-side load switching in industrial control modules where the load is tied to system ground. With its -100 V VDS rating and -13 A continuous drain current, it directly switches 24 V and 48 V loads such as solenoid valves, relay coils, and indicator lamps without level-shifting circuitry. The P-channel topology allows a simple pull-down gate drive from a microcontroller GPIO. The 205 mΩ RDS(on) at -10 V VGS minimizes conduction losses: at 5 A load the drop is ~1.0 V, dissipating ~5 W. The DPAK package's metal tab, when soldered to >= 1 square inch of copper pour, provides adequate thermal relief for continuous operation in fan-cooled enclosures.
Recommended
Reverse-Polarity Battery Protection
In battery protection circuits, the IRFR5410TRPBF is placed in series with the load on the high side, with its source connected to the load and drain to the battery. A Zener diode from gate to source pulls the gate below the battery rail during normal operation, turning the MOSFET on. When the battery is reversed, the gate becomes positive relative to source, keeping the MOSFET off and protecting downstream circuitry. The -100 V rating provides ample headroom for transient voltages on 12 V and 24 V battery systems. The low RDS(on) of 205 mΩ also keeps voltage drop minimal during normal operation, preserving battery life in low-power sleep modes.
Recommended
DC-DC Converter High-Side Switch
The IRFR5410TRPBF can be used as the high-side switch in P-channel buck converters and buck-boost topologies for -48 V telecom and 24 V industrial bus rails. Its ultra-low on-resistance per silicon area (advanced Gen 5 HEXFET process) keeps conduction losses low, while the 70 nC total gate charge enables switching frequencies above 200 kHz with manageable driver losses. In a buck converter delivering 5 A to a 5 V load from a 24 V source, the IRFR5410TRPBF dissipates approximately 1.5 W at full load, manageable in the DPAK package with standard copper pour. The avalanche rating is essential for handling the energy stored in the inductor at turn-off.
Recommended
Solenoid and Relay Driver
For driving inductive loads such as 24 V solenoids, latching relays, and contactor coils, the IRFR5410TRPBF provides a rugged switching solution. Its fully avalanche-rated design absorbs the inductive kickback energy without requiring external freewheeling diodes in many applications, simplifying the BOM. The device can handle the high inrush current typical of solenoid energization while the steady-state current stays well within its -13 A rating. Inductive switching tests per the datasheet show reliable avalanche handling at 13 A for the ruggedized HEXFET process.
Recommended
Power OR-ing for Redundant Supplies
In redundant power systems using two battery banks or two power supplies, the IRFR5410TRPBF can be used as an OR-ing MOSFET on each supply rail to prevent reverse current flow into a failed supply. The P-channel topology allows simple gate driving from each supply's voltage. When one supply drops below the other, the MOSFET naturally turns off, blocking reverse current. The -100 V rating accommodates wide input ranges, while the 205 mΩ RDS(on) keeps voltage drop low during normal parallel operation. Multiple devices can be paralleled for higher current capability with minimal derating thanks to the positive temperature coefficient of RDS(on).
Recommended
Hot-Swap and Inrush Limiting
The IRFR5410TRPBF is used in hot-swap circuits where a load card must be inserted into a live backplane without causing connector arcing or voltage transients. The P-channel device sits between the backplane supply and the load capacitance; its gate is slowly charged by an RC network so the MOSFET turns on over a controlled period, limiting inrush current. The avalanche-rated design absorbs the energy stored in the load capacitance if the circuit must be interrupted under fault conditions. The 205 mΩ RDS(on) at full turn-on minimizes steady-state voltage drop after the inrush event.
Recommended
Recommended Products Summary
Engineering reference data for IRFR5410TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR5410TRRPBF | IRFR5410TRLPBF | IRFR5410PBF | IRFR5410 | IRFU5410PBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-251AA (IPAK), through-hole - same die |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS max | -100 V | -100 V | -100 V | -100 V | -100 V | -100 V |
| Continuous Drain Current (TC=25C) | -13 A | -13 A | -13 A | -13 A | -13 A | -13 A |
| RDS(on) max at VGS=-10V | 205 mΩ | 205 mΩ | 205 mΩ | 205 mΩ | 205 mΩ | 205 mΩ |
| Total Gate Charge (Qg) typ | 70 nC | 70 nC | 70 nC | 70 nC | 70 nC | 70 nC |
| Power Dissipation (TC=25C) | 66 W | 66 W | 66 W | 66 W | 66 W | 66 W |
| Packaging | Tape & Reel, 2000/reel (TR suffix) | Tape & Reel reverse, 3000/reel | Tape & Reel left-pin, 2000/reel | Tube packaging | Tube packaging | Tube, through-hole |
| Avalanche Rated | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Fifth-generation HEXFET advanced process with ultra-low RDS(on) (vs Older IRFR-series P-channel MOSFETs (e.g., IRFR5305))
- Fully avalanche-rated design (vs Non-avalanche-rated competitor parts in same DPAK package)
- Industry-standard DPAK (TO-252) footprint with broad second-source availability (vs Proprietary packages from other vendors)
Design Notes
Estimated thermal analysis: with TC = 25 °C rating of 66 W but typical DPAK-on-PCB theta_JA around 50-70 °C/W (1 oz copper, 1 in² pour), the practical continuous dissipation in PCB-mounted designs is around 1.5-2.5 W before exceeding TJ = 150 °C at 25 °C ambient. At 1.5 W dissipation (e.g., 5 A load, 300 mV drop), junction rise is ~75-105 °C above ambient. Provide copper pours on source tab and gate-drive return to maximize heat spreading. Forced-air cooling significantly extends the safe operating envelope.
Lay out the DPAK footprint per JEDEC TO-252 standard: pad 1 (Gate) and pad 2 (Drain) sized for ~1 A per mm² trace width with 1 oz copper, and pad 3 (Source) / thermal tab land at least 1 in² (645 mm²) of continuous copper pour. Use thermal vias (typically 8-12 x 0.3 mm) under the tab to inner copper planes. Keep the gate trace short and away from switching nodes to minimize dv/dt-induced turn-on. Place a 10 kΩ gate-source resistor directly across gate and source pins to prevent false turn-on from leakage currents during system startup.
Three pitfalls: (1) Exceeding ±20 V VGS absolute maximum - even brief transients from gate-drive inductance can exceed this; add a 10 V Zener from gate to source if the drive circuit can overshoot. (2) Linear-mode operation - when used as a slow-start or hot-swap controller, the device dissipates high power at partial turn-on; verify SOA curves for the worst-case inrush profile. (3) Body-diode reverse recovery in half-bridge topologies - the intrinsic body diode is ruggedized but switch at < 100 kHz if reverse recovery losses are a concern. Always add a TVS or snubber on inductive loads for additional margin beyond the avalanche rating.
Compliance Information
Lead-free finish (PBF suffix) and RoHS-compliant per Infineon product information. Not AEC-Q100 qualified - for automotive applications requiring AEC-Q100, consider the AUIRFR5410 variant. Halogen-free status not specified in available data.
