IRLR3410TRRPBF vs IRLR3410TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3410TRRPBF disebabkan oleh Infineon dan IRLR3410TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR3410TRRPBF | IRLR3410TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 17 A | — |
| Power Dissipation (PD, Tc=25C) | 79 W | — |
| On-Resistance (RDS(on) max at VGS=10V) | 105 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1 V (at 250 uA) | — |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Technology | IR HEXFET (IR MOSFET process) | HEXFET (IR MOSFET, 5th generation) |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging Style | Tape & Reel Right (TRR) | — |
| Avalanche Rated | Yes | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55C to +175C (junction) |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited floor life at <30C/85% RH) |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Power Dissipation (Pd) at Tc=25C | — | 79 W |
| On-Resistance RDS(on) max | — | 105 mOhm |
| Gate Threshold Voltage Vgs(th) | — | Logic-level (drive ~4.5V) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Drain Tab Connection | — | Tab electrically tied to Drain |
| Polarity | — | N-Channel enhancement mode |