IRLR3636TRPBF vs IRLR3636TRLPBF Comparison

Detailed side-by-side comparison of IRLR3636TRPBF by Infineon and IRLR3636TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3636TRPBF IRLR3636TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.38 $0.74
FET Type N-Channel MOSFET, Metal Oxide N-Channel MOSFET
Drain-to-Source Voltage (V_DSS) 60 V
Continuous Drain Current (I_D) at T_C = 25C 50 A
Continuous Drain Current (I_D) at T_C = 100C [DATA_NEEDED: I_D at 100C]
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current]
Maximum R_DS(on) at V_GS = 10V 6.8 mOhm
Typical R_DS(on) at V_GS = 10V 5.4 mOhm
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) range]
Total Gate Charge (Q_G) 33 nC
Maximum Power Dissition (P_D) at T_C = 25C 143 W
Operating Temperature Range -55C to +175C -55 °C to +175 °C (TJ)
Package TO-252AA (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Technology IR HEXFET / IR MOSFET IR HEXFET® (IR MOSFET™)
RoHS Status Compliant
Lead-Free Yes (PBF suffix)
Drain-to-Source Voltage (VDS) 60 V
Continuous Drain Current (ID, TC=25°C) 50 A
Continuous Drain Current (ID, TC=100°C) 32 A [DATA_NEEDED: exact TC=100°C ID rating]
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM rating]
RDS(on) Max @ VGS=10V 6.8 mΩ
Gate-to-Source Voltage (VGS) Max ±20 V
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level)
Total Gate Charge (QG) 33 nC
Power Dissipation (PD, TC=25°C) 143 W
Lead-Free / RoHS Yes (PBF suffix)
Avalanche Rated Yes (per Infineon datasheet family)

Datasheets & Resources

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