IRLR3636TRPBF vs IRLR3636TRLPBF 비교
다음의 상세 나란히 비교: IRLR3636TRPBF 제조: Infineon 및 IRLR3636TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLR3636TRPBF | IRLR3636TRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.38 | $0.74 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D) at T_C = 25C | 50 A | — |
| Continuous Drain Current (I_D) at T_C = 100C | [DATA_NEEDED: I_D at 100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum R_DS(on) at V_GS = 10V | 6.8 mOhm | — |
| Typical R_DS(on) at V_GS = 10V | 5.4 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) range] | — |
| Total Gate Charge (Q_G) | 33 nC | — |
| Maximum Power Dissition (P_D) at T_C = 25C | 143 W | — |
| 동작 온도 범위 | -55C to +175C | -55 °C to +175 °C (TJ) |
| 패키지 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | IR HEXFET / IR MOSFET | IR HEXFET® (IR MOSFET™) |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25°C) | — | 50 A |
| Continuous Drain Current (ID, TC=100°C) | — | 32 A [DATA_NEEDED: exact TC=100°C ID rating] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM rating] |
| RDS(on) Max @ VGS=10V | — | 6.8 mΩ |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level) |
| Total Gate Charge (QG) | — | 33 nC |
| Power Dissipation (PD, TC=25°C) | — | 143 W |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Avalanche Rated | — | Yes (per Infineon datasheet family) |