IRLR3636TRPBF vs IRLR3636TRLPBF Vergleich

Detaillierter Direktvergleich von IRLR3636TRPBF von Infineon und IRLR3636TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLR3636TRPBF IRLR3636TRLPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,38 $0,74
FET Type N-Channel MOSFET, Metal Oxide N-Channel MOSFET
Drain-to-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D) at T_C = 25C 50 A —
Continuous Drain Current (I_D) at T_C = 100C [DATA_NEEDED: I_D at 100C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Maximum R_DS(on) at V_GS = 10V 6.8 mOhm —
Typical R_DS(on) at V_GS = 10V 5.4 mOhm —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) range] —
Total Gate Charge (Q_G) 33 nC —
Maximum Power Dissition (P_D) at T_C = 25C 143 W —
Betriebstemperaturbereich -55C to +175C -55 °C to +175 °C (TJ)
Gehäuse TO-252AA (DPAK) TO-252AA (DPAK)
Montageart Surface Mount Surface Mount
Technology IR HEXFET / IR MOSFET IR HEXFET® (IR MOSFET™)
RoHS-Status Compliant —
Lead-Free Yes (PBF suffix) —
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, TC=25°C) — 50 A
Continuous Drain Current (ID, TC=100°C) — 32 A [DATA_NEEDED: exact TC=100°C ID rating]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM rating]
RDS(on) Max @ VGS=10V — 6.8 mΩ
Gate-to-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (logic-level)
Total Gate Charge (QG) — 33 nC
Power Dissipation (PD, TC=25°C) — 143 W
Lead-Free / RoHS — Yes (PBF suffix)
Avalanche Rated — Yes (per Infineon datasheet family)

Datenblätter & Ressourcen

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