IRLR7843TRPBF vs IRLR3114ZTRPBF Comparison

Detailed side-by-side comparison of IRLR7843TRPBF by Infineon and IRLR3114ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR7843TRPBF IRLR7843TRPBF - 30V 161A N-Ch HEXFET MOSFET | Infineon

IRLR7843TRPBF - 30V 161A N-Ch HEXFET MOSFET | Infineon

IRLR7843TRPBF βœ“ Active

Specification Comparison

Parameter IRLR7843TRPBF IRLR3114ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.46
Polarity N-Channel β€”
Drain-Source Voltage (Vdss) 30 V β€”
Continuous Drain Current (Id) @ Tc=25C 161 A β€”
Power Dissipation (Pd) @ Tc=25C 140 W β€”
On-Resistance Rds(on) Max @ Vgs=10V 3.3 mOhm β€”
On-Resistance Rds(on) Max @ Vgs=4.5V 4.5 mOhm (typ) β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) 34 nC 40 nC @ VGS=4.5 V
Gate-to-Source Voltage Max Β±20 V β€”
Avalanche Energy (Eas) Fully characterized β€”
Operating Temperature Range -55C to +175C β€”
Package TO-252AA (DPAK) TO-252AA (DPAK) surface mount
Mounting Type Surface Mount Surface Mount
Technology HEXFET HEXFET (IR MOSFET)
Lead-Free / RoHS Yes (PBF suffix = lead-free) β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tc=25 C) β€” 42 A
Continuous Drain Current (ID, Tc=100 C) β€” 30 A
Pulsed Drain Current (IDM) β€” 130 A
Gate-Source Voltage (VGS) max β€” 16 V
Gate Threshold Voltage (VGS(th)) β€” 2.5 V (typ)
On-Resistance RDS(on) max @ VGS=10V β€” 4.5 mOhm
On-Resistance RDS(on) @ VGS=4.5V β€” 4.9 mOhm
Input Capacitance (Ciss) β€” 3.81 nF
Power Dissipation (Pd, Tc=25 C) β€” 140 W
Operating Junction Temperature β€” -55 C to +175 C
Number of Pins β€” 3 (2 + tab)
RoHS Status β€” Compliant

Datasheets & Resources

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