IRLS3036TRLPBF vs IRFB4020PBF Comparison
Detailed side-by-side comparison of IRLS3036TRLPBF by Infineon and IRFB4020PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLS3036TRLPBF | IRFB4020PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | N-Channel | — |
| Technology | IR HEXFET (planar DMOS) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 270 A | — |
| Continuous Drain Current (Id) at Tc=100C | 195 A | — |
| Pulsed Drain Current (Idm) | 1100 A | — |
| Rds(on) max @ Vgs=10V | 1.9 mOhm | — |
| Gate-Source Threshold Voltage (Vgs(th)) | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Total Gate Charge (Qg) typ | 91 nC | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max +/- V] | — |
| Power Dissipation (Pd) at Tc=25C | 380 W | — |
| Operating Temperature Range | -55C to +175C | — |
| Package | D2PAK (TO-263), surface mount | TO-220AB (through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| MSL Level | 1 | — |
| RoHS Status | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Integrated Body Diode | Yes (avalanche rated) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 18 A |
| Power Dissipation (PD) at TC | — | 100 W |
| RDS(on) Maximum | — | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | — | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 1.43 C/W |
| Operating Junction Temperature | — | 175 C (max) |
| Pin Count | — | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | — | Yes |
| Market Qualification | — | Consumer |
| Recommended Use | — | Class-D audio amplifier and high-efficiency switching applications |