IRLTS2242TRPBF vs IRFR2405TRPBF Comparison

Detailed side-by-side comparison of IRLTS2242TRPBF by Infineon and IRFR2405TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLTS2242TRPBF IRFR2405TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V 55 V
Continuous Drain Current (ID) at TA=25C -6.9 A —
Power Dissipation (PD) at TA=25C 2.0 W —
On-Resistance RDS(on) max at VGS=-10V 32 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th) typical]
Gate Drive Voltage (logic level) 4.5 V (fully enhanced), 2.5 V capable —
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET)
Package TSOP-6 (Micro 6) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) —
Package Thermal Resistance (RthJA) [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] —
MSL Level MSL1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant (Lead-Free PBF suffix)
Lead-Free Yes —
Halogen Free Yes [DATA_NEEDED: halogen-free status]
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Total Gate Charge (Qg) — 70 nC
Power Dissipation (PD) at Tc=25C — 110 W
Operating Junction Temperature — -55C to +175C
Pin Count — 3 (Gate, Drain, Source) + Tab
Avalanche Rated — Yes (100% avalanche tested)

Datasheets & Resources

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