IRLTS2242TRPBF vs IRFR2405TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLTS2242TRPBF sa pamamagitan ng Infineon at IRFR2405TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLTS2242TRPBF IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon

IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon

IRLTS2242TRPBF ✓ Nakahanda
Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRLTS2242TRPBF IRFR2405TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V 55 V
Continuous Drain Current (ID) at TA=25C -6.9 A —
Power Dissipation (PD) at TA=25C 2.0 W —
On-Resistance RDS(on) max at VGS=-10V 32 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th) typical]
Gate Drive Voltage (logic level) 4.5 V (fully enhanced), 2.5 V capable —
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET)
Packhaging TSOP-6 (Micro 6) TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C (junction) —
Package Thermal Resistance (RthJA) [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] —
Level ng MSL MSL1 (per JEDEC J-STD-020) 1
Tindminan RoHS Compliant Compliant (Lead-Free PBF suffix)
Lead-Free Yes —
Wala sa Halogen Yes [DATA_NEEDED: halogen-free status]
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Total Gate Charge (Qg) — 70 nC
Power Dissipation (PD) at Tc=25C — 110 W
Temperature ng Junction na Operasyon — -55C to +175C
Bilang ng Pin — 3 (Gate, Drain, Source) + Tab
Avalanche Rated — Yes (100% avalanche tested)

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