IRLU024NPBF vs IRFR3710ZTRPBF Perbandingan

Perbandingan bersamaan detil IRLU024NPBF dari Infineon dan IRFR3710ZTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLU024NPBF IRFR3710ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLU024NPBF —
FET Type N-Channel, Logic-Level N-Channel
Technology HEXFET Power MOSFET (5th generation) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 17 A 56 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed IDM]
On-Resistance RDS(on) max at VGS=10V 65 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Total Gate Charge (Qg) 10 nC (typical, per listing) —
Power Dissipation (PD) at TC=25C 45 W 140 W
Thermal Resistance Junction-to-Case (RthJC) 3.3 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 110 C/W (50 C/W PCB-mounted) —
Suhu Hubung Kerja -55C to +175C -55C to +175C
Paket IPAK (TO-251AA), Through Hole TO-252AA (DPAK)
Tipe Mounting Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix indicates lead-free plating) —
Qualification JEDEC standard —
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
Status RoHS — Compliant
Lead-Free — Yes

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