IRLU024NPBF vs IRFR3710ZTRPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRLU024NPBF tarafından Infineon ve IRFR3710ZTRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRLU024NPBF IRFR3710ZTRPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLU024NPBF —
FET Type N-Channel, Logic-Level N-Channel
Technology HEXFET Power MOSFET (5th generation) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 17 A 56 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed IDM]
On-Resistance RDS(on) max at VGS=10V 65 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Total Gate Charge (Qg) 10 nC (typical, per listing) —
Power Dissipation (PD) at TC=25C 45 W 140 W
Thermal Resistance Junction-to-Case (RthJC) 3.3 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 110 C/W (50 C/W PCB-mounted) —
İşletim Jant Sıcaklığı -55C to +175C -55C to +175C
Paket IPAK (TO-251AA), Through Hole TO-252AA (DPAK)
Montaj Türü Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix indicates lead-free plating) —
Qualification JEDEC standard —
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
RoHS Durumu — Compliant
Lead-Free — Yes

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