IRLZ44NPBF vs IRLZ44ZPBF Comparison

Detailed side-by-side comparison of IRLZ44NPBF by Infineon and IRLZ44ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLZ44NPBF IRLZ44ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $1.15
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC=25°C 47 A —
Pulsed Drain Current (IDM) 160 A —
Gate-to-Source Voltage (VGS) Max ±16 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.0 V (typ 1.5 V) 1.0 V to 2.5 V
Static Drain-to-Source On-Resistance (RDS(on)) 22 mΩ max at VGS=5V, ID=25A —
Total Gate Charge (Qg) 32 nC 24 nC
Power Dissipation (PD) at TC=25°C 110 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
Operating Junction Temperature -55 °C to +175 °C —
Thermal Resistance Junction-to-Case (RθJC) 1.4 °C/W —
Package TO-220AB (through-hole, 3 leads) TO-220AB
Mounting Type Through Hole Through-Hole
Technology HEXFET (advanced process) HEXFET
Logic-Level Gate Drive Yes (fully enhanced at VGS=5V) —
RoHS Status Compliant Compliant
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRLZ44ZPBF
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID) — 51 A
RDS(on) Max @ VGS=10V — 13.5 mOhm
RDS(on) Max @ VGS=4.5V — 22 mOhm
Operating Temperature Range — -55C to +175C
Maximum Junction Temperature — 175 C
Power Dissipation (PD) — 80 W
Gate Drive Level — Logic-Level (4.5V to 10V)
Qualification — Automotive (per manufacturer description)

Datasheets & Resources

Browse All Products Create BOM Request Quote