IS43TR16256AL-125KBL vs K4A8G165WB-BCPB Comparison
Detailed side-by-side comparison of IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc and K4A8G165WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ ActiveSamsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB ✓ ActiveSpecification Comparison
| Parameter | IS43TR16256AL-125KBL | K4A8G165WB-BCPB |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.60 | $2.30 |
| Memory Type | SDRAM - DDR3L | — |
| Memory Size | 4Gbit (256M x 16) | — |
| Interface | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35V (backward compatible to 1.5V) | 1.2 V (1.14 V to 1.26 V) |
| Package | 96-TWBGA (9x13mm) | 96-ball FBGA (TFBGA-96) |
| Mounting Type | Surface Mount | — |
| Operating Temperature | 0°C ~ 95°C | 0°C to 85°C |
| Memory Format | DRAM | — |
| Technology | SDRAM - DDR3L | — |
| Data Rate | 1600 Mbps | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Number of Terminals | 96 | 96 |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Speed Grade | — | 2133 Mbps (PC4-17000) |
| Burst Length | — | 8 (BL8) |
| Burst Type | — | Sequential and Interleave |
| CAS Latency | — | Programmable (e.g., 15, 16, 18) |
| Refresh | — | Auto and Self Refresh |
| Package Code | — | TFBGA |
| Package Shape | — | RECTANGULAR |
| Terminal Position | — | BOTTOM |