IS43TR16256AL-125KBLI-TR vs MT41K128M16JT Comparison

Detailed side-by-side comparison of IS43TR16256AL-125KBLI-TR by ISSI, Integrated Silicon Solution Inc and MT41K128M16JT by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ Active
Micron Technology
MT41K128M16JT MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT ✓ Active

Specification Comparison

Parameter IS43TR16256AL-125KBLI-TR MT41K128M16JT
Brand ISSI, Integrated Silicon Solution Inc Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.25 $9.20
Memory Type DDR3L SDRAM DDR3L SDRAM
Memory Size 4Gbit (256M x 16) —
Data Bus Width 16 bit —
Clock Frequency 800 MHz —
Data Rate 1600 Mbps —
CAS Latency 11 —
Supply Voltage (VDD/VDDQ) 1.35V ± 0.1V, -0.067V 1.35 V (typ) / 1.283 V to 1.45 V (DDR3L)
Backward Compatible Voltage 1.5V —
Row Cycle Time (tRC) 20 ns —
Row Active Time (tRAS) 20 ns —
Operating Temperature Range -40°C to +95°C (TC) —
Package 96-TWBGA (9x13 mm) 96-FBGA (8 mm x 14 mm, 0.8 mm pitch)
Mounting Type Surface Mount Surface Mount (FBGA)
Burst Length 8 —
On-Die Termination (ODT) Yes —
Refresh Modes Auto-refresh, Self-refresh —
RoHS Status Compliant Compliant (Pb-free FBGA)
Density — 2 Gbit
Organization — 128M x 16
Banks — 8 banks
Prefetch Architecture — 8n-bit prefetch
Access Time — 0.225 ns (CK to DQ, -125 bin)
Cycle Time — 1.25 ns (-125 bin) / 1.07 ns (-107 bin)
Max Data Rate — 1600 MT/s (-125) / 1866 MT/s (-107)
Operating Temperature — 0C to +95C (commercial, no suffix)
Industrial Temperature Option — -40C to +95C (IT suffix)
Automotive Temperature Option — -40C to +105C (AAT) / -40C to +95C (AIT)
Process Technology — CMOS
On-Die Termination — Dynamic ODT (nominal/weak/strong)
Calibration — ZQ calibration (240 ohm ext. resistor)
Refresh — Auto self-refresh (ASR)
Write Feature — Write leveling + data mask

Datasheets & Resources

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