IS43TR16256AL-125KBLI-TR vs MT41K128M16JT 对比

详细并排对比 IS43TR16256AL-125KBLI-TR 出自 ISSI, Integrated Silicon Solution Inc 和 MT41K128M16JT 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ 量产中
Micron Technology
MT41K128M16JT MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT ✓ 量产中

规格对比

参数 IS43TR16256AL-125KBLI-TR MT41K128M16JT
品牌 ISSI, Integrated Silicon Solution Inc Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $8.25 $9.20
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储容量 4Gbit (256M x 16) —
数据总线宽度 16 bit —
Clock Frequency 800 MHz —
数据速率 1600 Mbps —
CAS 延迟 11 —
Supply Voltage (VDD/VDDQ) 1.35V ± 0.1V, -0.067V 1.35 V (typ) / 1.283 V to 1.45 V (DDR3L)
Backward Compatible Voltage 1.5V —
Row Cycle Time (tRC) 20 ns —
Row Active Time (tRAS) 20 ns —
工作温度范围 -40°C to +95°C (TC) —
封装 96-TWBGA (9x13 mm) 96-FBGA (8 mm x 14 mm, 0.8 mm pitch)
安装类型 Surface Mount Surface Mount (FBGA)
Burst Length 8 —
On-Die Termination (ODT) Yes —
Refresh Modes Auto-refresh, Self-refresh —
RoHS 状态 Compliant Compliant (Pb-free FBGA)
Density — 2 Gbit
存储组织 — 128M x 16
Banks — 8 banks
Prefetch Architecture — 8n-bit prefetch
Access Time — 0.225 ns (CK to DQ, -125 bin)
Cycle Time — 1.25 ns (-125 bin) / 1.07 ns (-107 bin)
Max Data Rate — 1600 MT/s (-125) / 1866 MT/s (-107)
工作温度 — 0C to +95C (commercial, no suffix)
Industrial Temperature Option — -40C to +95C (IT suffix)
Automotive Temperature Option — -40C to +105C (AAT) / -40C to +95C (AIT)
Process Technology — CMOS
On-Die Termination — Dynamic ODT (nominal/weak/strong)
Calibration — ZQ calibration (240 ohm ext. resistor)
Refresh — Auto self-refresh (ASR)
Write Feature — Write leveling + data mask

数据手册与资源

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