IS43TR16256AL-125KBLI-TR vs MT41K128M16JT Vergleich

Detaillierter Direktvergleich von IS43TR16256AL-125KBLI-TR von ISSI, Integrated Silicon Solution Inc und MT41K128M16JT von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ Aktiv
Micron Technology
MT41K128M16JT MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT - 2Gb DDR3L SDRAM 128Mx16 96-FBGA | Micron

MT41K128M16JT ✓ Aktiv

Spezifikationsvergleich

Parameter IS43TR16256AL-125KBLI-TR MT41K128M16JT
Marke ISSI, Integrated Silicon Solution Inc Micron Technology
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $8,25 $9,20
Speichertyp DDR3L SDRAM DDR3L SDRAM
Speichergröße 4Gbit (256M x 16) —
Datenbusbreite 16 bit —
Clock Frequency 800 MHz —
Datenrate 1600 Mbps —
CAS-Latenz 11 —
Supply Voltage (VDD/VDDQ) 1.35V ± 0.1V, -0.067V 1.35 V (typ) / 1.283 V to 1.45 V (DDR3L)
Backward Compatible Voltage 1.5V —
Row Cycle Time (tRC) 20 ns —
Row Active Time (tRAS) 20 ns —
Betriebstemperaturbereich -40°C to +95°C (TC) —
Gehäuse 96-TWBGA (9x13 mm) 96-FBGA (8 mm x 14 mm, 0.8 mm pitch)
Montageart Surface Mount Surface Mount (FBGA)
Burst Length 8 —
On-Die Termination (ODT) Yes —
Refresh Modes Auto-refresh, Self-refresh —
RoHS-Status Compliant Compliant (Pb-free FBGA)
Density — 2 Gbit
Speicherorganisation — 128M x 16
Banks — 8 banks
Prefetch Architecture — 8n-bit prefetch
Access Time — 0.225 ns (CK to DQ, -125 bin)
Cycle Time — 1.25 ns (-125 bin) / 1.07 ns (-107 bin)
Max Data Rate — 1600 MT/s (-125) / 1866 MT/s (-107)
Betriebstemperatur — 0C to +95C (commercial, no suffix)
Industrial Temperature Option — -40C to +95C (IT suffix)
Automotive Temperature Option — -40C to +105C (AAT) / -40C to +95C (AIT)
Process Technology — CMOS
On-Die Termination — Dynamic ODT (nominal/weak/strong)
Calibration — ZQ calibration (240 ohm ext. resistor)
Refresh — Auto self-refresh (ASR)
Write Feature — Write leveling + data mask

Datenblätter & Ressourcen

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